Description
The 852.347 nm DBR Laser Diode from Photodigm offers high-performance edge-emitting technology, ideal for Cesium-based atomic spectroscopy and Raman spectroscopy applications. Built on advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser provides a stable, single spatial mode beam with passivated facets to enhance reliability and longevity. I
t is specifically designed for precision in Cesium D2 transition measurements, with temperature stability guaranteed within ±10°C of room temperature. Available in multiple configurations, including Chip on Submount (CoS) and optional Mode-Hop Free (MHF) add-ons, the 852.347 nm DBR laser diode supports a broad optical power range from 10 mW to 240 mW.
With a nominal operating current of 30–350 mA, the laser provides excellent slope efficiency (0.6 to 0.9 W/A) and low threshold currents (as low as 30 mA). The device is well-suited for demanding spectroscopy applications and provides the necessary stability and performance for critical experimental setups.
852.347 Single-Frequency DBR Laser Diode
Specifications
| Center Wavelength: | 0.852 um |
|---|---|
| Output Power: | 80 mW |
| Laser Forward Voltage: | 2 V |
| Operating Current, Max (CW & Pulsed): | 350 mA |
| Optical Power At Max Operating Current: | 240 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
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Features
- High Power Range: 10–240 mW, ensuring optimal performance across different applications
- Stable Wavelength: Nominal wavelength of 852.347 nm ± 0.6 nm, suitable for Cesium spectroscopy
- Low Threshold Current: Starts at just 30 mA for efficient operation
- Temperature Stability: Guaranteed ±10°C around room temperature for consistent performance
- Advanced Technology: Monolithic single-frequency Gallium Arsenide (GaAs) design for high precision
- Passivated Facets: For improved reliability and reduced degradation over time
- Multiple Packaging Options: Available in CoS, MHF, and TOSA configurations for flexibility in integration
Applications
- Cesium Spectroscopy: Ideal for atomic spectroscopy in Cesium-based experiments
- Raman Spectroscopy: Used in high-precision Raman spectroscopy applications
- Laser Cooling and Trapping: Suitable for laser cooling transitions in atomic physics
- Fundamental Mode Operation: Ensures consistent performance with minimal divergence
- Precision Measurements: Essential for experimental setups requiring wavelength stability and low noise
Frequently Asked Questions
What is the nominal wavelength of the 852.347 nm DBR laser diode?
What is the operating temperature range for the 852.347 nm DBR laser diode?
What is the power range of the 852.347 nm DBR laser diode?
What is the threshold current for the 852.347 nm DBR laser diode?
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