830 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.83 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
Document icon Download Data Sheet Download icon

Features

  • High Output Power: Delivers optical power from 80 mW to 180 mW for strong and reliable performance
  • Low Threshold Current: Nominal threshold current of 50 mA ensures efficient operation and minimized power consumption
  • High Slope Efficiency: Provides a slope efficiency of 0.9 W/A, improving energy conversion
  • Precision Wavelength: Operates at 816 nm ± 0.6 nm, perfect for biomedical applications
  • Reliable Operation: Passivated facets for extended operational life and minimized degradation
  • Multiple Packaging Options: Available in CoS, MHF, and TOSA formats for flexible integration needs

Applications

  • Biomedical Diagnostics: Ideal for low-noise pumping in diagnostic systems like optical coherence tomography (OCT) and Raman spectroscopy
  • Imaging Systems: Essential for imaging technologies requiring stable, high-power laser sources
  • Laser Pumping: Suitable for efficient pump sources for fiber lasers in various systems
  • Research and Development: Perfect for scientific research that demands precise, stable, low-noise laser sources
  • Medical Instrumentation: Used in therapeutic and diagnostic devices that require high precision and reliability