828 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.828 um
Output Power: 80 mW
Laser Forward Voltage: 2 V
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
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Features

  • Single-Frequency Operation: Ensures stable, narrow-linewidth output with minimal spectral drift
  • High Optical Power: Operates at 80–180 mW, suitable for high-sensitivity applications
  • Excellent Spectral Purity: Provides a minimum side-mode suppression ratio of 40 dB
  • Precise Wavelength Control: Temperature tuning at 0.06 nm/°C and current tuning at 0.002 nm/mA
  • Passivated Facets: Enhances reliability and long-term performance
  • Multiple Packaging Options: Available in CoS, TO-8, C-Mount, and TOSA configurations
  • Wide Operating Temperature Range: Ensures stable performance from -5°C to +70°C

Applications

  • LIDAR Systems: Ideal for precise distance measurement and atmospheric sensing
  • Water Vapor Sensing: Enables accurate detection in environmental and industrial applications
  • Spectroscopy: Supports high-resolution spectral analysis with minimal noise
  • Optical Metrology: Used in precision measurement applications requiring single-frequency stability
  • Atomic and Quantum Research: Provides stable laser sources for high-precision experiments