Description
The Photodigm 823 nm DBR Laser Diode is a high-performance, monolithic, single-frequency edge-emitting laser designed for precision optical applications. Engineered with Gallium Arsenide (GaAs) technology, it delivers a stable single spatial mode output with a nominal wavelength of 823 nm. Featuring passivated facets for enhanced reliability, this laser diode operates in a high-power range of 80–180 mW, making it ideal for applications requiring low-noise optical sources.
This laser diode is available in multiple free-space package configurations, including Chip on Submount (CoS), C-Mount, TO-8, and Transmitter Optical Subassembly (TOSA). Its narrow linewidth, high side-mode suppression ratio (SMSR), and excellent beam quality make it suitable for biomedical diagnostics, imaging, and advanced spectroscopy applications.
With a temperature tuning rate of 0.06 nm/°C and a current tuning rate of 0.002 nm/mA, the 823 nm DBR laser diode provides fine control over wavelength stability. Designed for high reliability and precision, it is the optimal choice for demanding applications requiring stable and coherent laser sources.
823 Single-Frequency DBR Laser Diode
Specifications
| Center Wavelength: | 0.823 um |
|---|---|
| Output Power: | 80 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | + to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
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Features
- Single-Frequency Operation: Provides a stable and narrow linewidth laser output with a typical linewidth of 500 kHz
- High Power Output: Delivers up to 180 mW of optical power at a maximum operating current of 250 mA
- Superior Spectral Purity: High Side Mode Suppression Ratio (SMSR) of -40 dB, ensuring minimal mode competition
- Excellent Beam Quality: Fundamental mode output with a beam divergence of 6° x 28° (typical)
- Wavelength Stability: Temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA for precise wavelength control
- Multiple Packaging Options: Available in Chip on Submount (CoS), C-Mount, TO-8, and TOSA configurations
- Reliable GaAs Construction: Designed for long-term stability with passivated facets to enhance durability
- ESD Protection: Requires static-safe handling; includes protection guidelines for enhanced reliability
Applications
- Biomedical Diagnostics: Ideal for fluorescence imaging, optical coherence tomography (OCT), and spectroscopy
- Precision Metrology: Used in high-resolution interferometry and optical frequency standards
- Atomic and Molecular Spectroscopy: Suitable for high-precision spectroscopy and quantum optics research
- Optical Communications: Supports free-space and fiber-optic communication systems requiring a stable laser source
- Semiconductor Inspection: Enables high-resolution wafer analysis and defect detection
- Laser Pumping: Functions as a low-noise pump source for solid-state and fiber lasers
Frequently Asked Questions
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