The 816 nm DBR Laser Diode from Photodigm is a high-performance edge-emitting laser diode, featuring advanced Gallium Arsenide (GaAs) technology. Designed for precision and reliability, it delivers a stable, single-frequency beam ideal for demanding applications in biomedical diagnostics and imaging. The diode operates at a nominal wavelength of 816 nm with a power range of 80 mW to 180 mW, making it an excellent low-noise pump source for a variety of biomedical applications, including optical coherence tomography (OCT), Raman spectroscopy, and other advanced diagnostic systems.

With a low threshold current of 50 mA and a slope efficiency of 0.9 W/A, this device ensures high energy conversion and efficient operation. The laser features passivated facets to enhance its reliability and longevity, even under continuous or pulsed operation. Its versatility is further extended by the availability of multiple package options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and TO-8 C-Mount Transmitter Optical Subassembly (TOSA), allowing for seamless integration into various systems.

This laser diode is designed to operate reliably across a wide temperature range, from 5°C to 70°C, with stable performance at the laser chip level up to 45°C. With its precise wavelength, low noise, and high power output, the 816 nm DBR Laser Diode offers a superior solution for applications requiring consistent, high-performance laser sources.