800 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.8 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features

  • Single-Frequency Operation: Delivers stable and narrow-linewidth output with a nominal linewidth of 500 kHz
  • High Power Output: Provides optical power ranging from 80 mW to 180 mW
  • Single Spatial Mode Beam: Ensures high precision and reliability for biomedical and spectroscopy applications
  • Temperature and Current Tunable: Offers precise wavelength control with temperature tuning at 0.06 nm/°C and current tuning at 0.002 nm/mA
  • Passivated Facets: Enhances device longevity and stability in continuous operation
  • Multiple Package Options: Available in CoS, TO-8, C-Mount, and TOSA for easy integration

Applications

  • Biomedical Diagnostics and Imaging: Provides stable light sources for high-resolution imaging and diagnostic equipment
  • Low-Noise Pump Sources: Ideal for integration into pump laser applications requiring stable and low-noise performance
  • Precision Measurement Systems: Used in applications that demand accurate wavelength control and stability
  • Research & Development: Supports quantum optics, spectroscopy, and photonics research projects