794.978 Single-Frequency DBR Laser Diode

Name: 794.978 Single-Frequency DBR Laser Diode
Brand: Photodigm Inc.
Availability: InStock

Description

The Photodigm 794.978 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, monolithic, single-frequency laser designed for precision applications in atomic spectroscopy, rubidium-based quantum sensing, and optical metrology. Engineered with Gallium Arsenide (GaAs) technology, it delivers a single spatial mode beam with passivated facets for enhanced reliability.

This DBR laser diode ensures superior spectral stability, offering a nominal wavelength of 794.978 nm ± 0.6 nm, making it ideal for applications requiring high coherence and low noise. It supports multiple power levels, ranging from 10 mW to 180 mW, with a mode-hop-free (MHF) option for enhanced stability. Additionally, the temperature tuning rate of 0.06 nm/°C ensures precise wavelength control.

Available in various packaging options, including Chip on Submount (CoS), TO-8, and Transmitter Optical Subassembly (TOSA), this laser diode is designed for easy integration into demanding optical systems. Spectroscopy Certified, it guarantees wavelength accuracy within ±10°C of room temperature, ensuring consistent performance in laboratory and industrial environments.

Specifications

Center Wavelength:	0.794 um
Output Power:	80 mW
Operating Current, Max (CW & Pulsed):	250 mA
Optical Power At Max Operating Current:	180 mA
Storage Temperature:	0 to +75 °C
Nominal Laser Linewidth @ LIV Current:	500 kHz
Temperature Tuning Rate:	0.06 nm/ºC
Polarization Extinction Ratio:	-20 dB
Operating Temperature (Chip):	+5 to +45 °C
Beam Divergence @ FWHM (θ\|\| X θ⊥):	6 x 28 º
Laser Forward Voltage:	2 V

Download Data Sheet

Features

Single Spatial Mode Beam: Ensures high precision and reliability in spectroscopy applications
Passivated Facets: Guarantees enhanced device longevity and durability
Spectroscopy Certified: Guaranteed performance at the rubidium two-photon transition (±10°C from room temperature)
High Power Output: Power range of 80–180 mW, providing strong, stable output
Temperature and Current Tunable: Offers precise control for various experimental setups
Monolithic GaAs Technology: Ensures excellent beam quality and reliability

Applications

Atomic Spectroscopy: Ideal for rubidium-based (Rb) atomic spectroscopy applications
Precision Measurement Systems: Perfect for systems requiring stable and high-output laser sources
Research & Development: Essential for experimental setups in quantum optics and atomic physics
High-Precision Analytical Systems: Suitable for systems that require accurate wavelength control and stability

Name

Work Email

Organization (recommended)

Your message to supplier

Get quotes from similar suppliers

Add to Watchlist (My Watchlist)

Ships from:

United States

Sold by:

Photodigm Inc.

On FindLight:

since 2019

Got Questions? Ask Above ▲

Message the supplier directly
No signup or account needed
No FindLight fees or markups
Expect a fast reply

Frequently Asked Questions

What is the primary application of the 794.978 nm DBR Laser Diode?

The 794.978 nm DBR laser diode is primarily used in rubidium-based atomic spectroscopy and quantum sensing applications. Its precise wavelength control makes it ideal for high-precision measurements in research and industrial settings.

How does the DBR laser ensure wavelength stability?

The laser utilizes monolithic GaAs DBR technology, providing a single-frequency, single-spatial-mode beam. It is Spectroscopy Certified, guaranteeing operation at the rubidium D1 transition (±10°C from room temperature), ensuring minimal drift and precise wavelength control.

What power levels are available for this laser diode?

The 794.978 nm DBR series offers different power ranges based on operating current. Low-power versions operate between 10 to 30 mW, medium-power versions range from 40 to 80 mW, and high-power models deliver 80 to 180 mW of optical output.

How can the wavelength be tuned?

The wavelength can be tuned through temperature and current adjustments. Temperature tuning occurs at a rate of 0.06 nm per degree Celsius, while current tuning allows for fine adjustments at 0.002 nm per milliampere. This flexibility enables precise control for various spectroscopy and experimental applications.

What packaging options are available for the laser diode?

The 794.978 nm DBR Laser Diode is available in multiple package configurations to suit different integration requirements. Options include Chip on Submount (CoS), CoS with Mode-Hop Free (MHF) design, CoS with Virtual Point Source (VPS) lens, 9MM TO-8 package, C-Mount, and Transmitter Optical Subassembly (TOSA).