Description
The 785 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser designed for applications requiring a single-frequency, stable, and reliable optical source. Built using Photodigm’s advanced monolithic GaAs laser technology, this diode provides a single spatial mode beam and features passivated facets for enhanced reliability.
With a nominal wavelength of 785 nm (±0.6 nm) and a high side mode suppression ratio (SMSR), this DBR laser diode is optimized for Raman spectroscopy, precision metrology, and scientific research applications. It offers low noise operation, excellent wavelength stability, and precise tuning capabilities, making it a preferred choice for demanding optical systems.
Available in multiple power configurations, the low-power version operates within a range of 40–80 mW, while the high-power variant delivers 80–180 mW. With its robust design, hermetically sealed package options, and support for add-ons such as Mode-Hop Free (MHF) and Virtual Point Source (VPS) lenses, the 785 nm DBR laser diode ensures reliable performance across a wide temperature range.
785 Single-Frequency DBR Laser Diode
Specifications
| Center Wavelength: | 0.785 um |
|---|---|
| Output Power: | 80 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
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Features
- Single Spatial Mode Beam: Ensures high precision and reliability in spectroscopy applications
- Passivated Facets: Guarantees enhanced device longevity and durability
- Spectroscopy Certified: Guaranteed performance at the rubidium two-photon transition (±10°C from room temperature)
- High Power Output: Power range of 80–180 mW, providing strong, stable output
- Temperature and Current Tunable: Offers precise control for various experimental setups
- Monolithic GaAs Technology: Ensures excellent beam quality and reliability
Applications
- Atomic Spectroscopy: Ideal for rubidium-based (Rb) atomic spectroscopy applications
- Precision Measurement Systems: Perfect for systems requiring stable and high-output laser sources
- Research & Development: Essential for experimental setups in quantum optics and atomic physics
- High-Precision Analytical Systems: Suitable for systems that require accurate wavelength control and stability
Frequently Asked Questions
What makes the 785 nm DBR laser diode suitable for spectroscopy applications?
How does the DBR laser diode achieve wavelength stability?
What power levels are available for the 785 nm DBR laser diode?
What packaging options are available for this laser diode?
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