SB1-532-0.3-100 Microchip Laser 532nm

Specifications

Avg. Power: 0.03 W
Wavelength: 532 nm
Repetition Rate: 0.001 – 100 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 0.4 ns
Pulse-to-Pulse Stability (RMS): Not Specified
Cooling: Air
Pulse Energy: 0.3 uJ
Peak Power: 0.75 kW
Energy Stability (Short Term): 3%
Energy Stability (Long Term): 5%
Beam Quality (M^2): 1.3
Beam Diameter (at Exit W/o Beam Expander): 0.6 mm
Beam Divergence: 9 mrad
Beam Ellipticity: 0.8
Warm-Up Time: 5 min
Electric Power Concumption: 20 W
Mechanical Package: SB1
Operational Temperature Range: +10°C to +40°C
Storage Temperature Range: -20°C to +60°C
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Features

  • Wavelength: 532 nm
  • Pulse Energy: Up to 40 µJ
  • Pulse Duration: 1.3 ns
  • Pulse Repetition Rate: 100 Hz
  • Beam Quality (M²): < 1.5
  • Single Longitudinal Mode (SLM): Ensures stable and precise frequency emission
  • Compact Design: Dimensions of 30mm x 50mm x 15mm^3

Applications

  • Scientific Research: Ideal for various research applications requiring precise laser pulses
  • LIDAR Systems: Well-suited for LIDAR (Light Detection and Ranging) applications
  • Material Processing: High pulse energy for efficient material cutting and ablation
  • Spectroscopy: Offers stable and narrow linewidth for accurate spectral analysis
  • OEM Integration: Compact design facilitates seamless integration into OEM equipment