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Description

The SB1-532 Microchip Laser is a cutting-edge DPSS (Diode-Pumped Solid State) laser designed for precision applications. Operating at a wavelength of 532 nm, this nanosecond pulsed laser offers remarkable performance characteristics, including high pulse energy, excellent beam quality, and a compact design. It is an ideal choice for applications requiring precision and reliability.

SB1-532-0.3-100: Microchip Laser 532nm

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Specifications

Avg. Power: 0.03 W
Wavelength: 532 nm
Repetition Rate: 0.001 – 100 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 0.4 ns
Cooling: Air
Pulse Energy: 0.3 uJ
Peak Power: 0.75 kW
Energy Stability (Short Term): 3%
Energy Stability (Long Term): 5%
Beam Quality (M^2): 1.3
Beam Diameter (at Exit W/o Beam Expander): 0.6 mm
Beam Divergence: 9 mrad
Beam Ellipticity: 0.8
Warm-Up Time: 5 min
Electric Power Concumption: 20 W
Mechanical Package: SB1
Operational Temperature Range: +10°C to +40°C
Storage Temperature Range: -20°C to +60°C

Got questions about specs? Use the inquiry form to ask.

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Features

  • Wavelength: 532 nm
  • Pulse Energy: Up to 40 µJ
  • Pulse Duration: 1.3 ns
  • Pulse Repetition Rate: 100 Hz
  • Beam Quality (M²): < 1.5
  • Single Longitudinal Mode (SLM): Ensures stable and precise frequency emission
  • Compact Design: Dimensions of 30mm x 50mm x 15mm^3

Applications

  • Scientific Research: Ideal for various research applications requiring precise laser pulses
  • LIDAR Systems: Well-suited for LIDAR (Light Detection and Ranging) applications
  • Material Processing: High pulse energy for efficient material cutting and ablation
  • Spectroscopy: Offers stable and narrow linewidth for accurate spectral analysis
  • OEM Integration: Compact design facilitates seamless integration into OEM equipment

Frequently Asked Questions

What is the SB1-532-0.3-100 532nm Microchip Laser?
The SB1-532-0.3-100 532nm Microchip Laser is a short nanosecond pulsed, 0.3uJ, low SWaP, ultra-compact, 100 kHz, passively Q-switched, DPSS laser.
What are the key features of the SB1-532-0.3-100 532nm Microchip Laser?
The key features of the SB1-532-0.3-100 532nm Microchip Laser are 532 nm popular wavelength, < 400ps sub-ns pulse duration, 0.3uJ energy per pulse, Single Longitudinal Mode with M^2 of 1.3, and an all-in-one miniature design.
What are the applications of the SB1-532-0.3-100 532nm Microchip Laser?
The SB1-532-0.3-100 532nm Microchip Laser has found applications in Biophotonics, LIBS, LiDAR, Telemetry, Laser manufacturing, Micromachining, Spectroscopy, and Raman spectroscopy.
What are the technical specifications of the SB1-532-0.3-100 532nm Microchip Laser?
The technical specifications of the SB1-532-0.3-100 532nm Microchip Laser include output wavelength of 532 nm, pulse repetition rate of 100 kHz, pulse energy > 0.3 uJ, pulse width < 400 ps, peak power > 0.75 kW, and beam quality (M2) < 1.3.
What options are available for the SB1-532-0.3-100 532nm Microchip Laser?
The options available for the SB1-532-0.3-100 532nm Microchip Laser include beam expander and collimator, heat-sink, development kit, and quick start/evaluation kit.

Got more questions? Use the inquiry form to ask the supplier directly.

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