Description
The SB1-532 Microchip Laser is a cutting-edge DPSS (Diode-Pumped Solid State) laser designed for precision applications. Operating at a wavelength of 532 nm, this nanosecond pulsed laser offers remarkable performance characteristics, including high pulse energy, excellent beam quality, and a compact design. It is an ideal choice for applications requiring precision and reliability.
SB1-532-0.3-100 Microchip Laser 532nm
Specifications
| Avg. Power: | 0.03 W |
|---|---|
| Wavelength: | 532 nm |
| Repetition Rate: | 0.001 – 100 kHz |
| Spatial Mode (M^2): | 1.3 |
| Pulse Duration: | 0.4 ns |
| Pulse-to-Pulse Stability (RMS): | Not Specified |
| Cooling: | Air |
| Pulse Energy: | 0.3 uJ |
| Peak Power: | 0.75 kW |
| Energy Stability (Short Term): | 3% |
| Energy Stability (Long Term): | 5% |
| Beam Quality (M^2): | 1.3 |
| Beam Diameter (at Exit W/o Beam Expander): | 0.6 mm |
| Beam Divergence: | 9 mrad |
| Beam Ellipticity: | 0.8 |
| Warm-Up Time: | 5 min |
| Electric Power Concumption: | 20 W |
| Mechanical Package: | SB1 |
| Operational Temperature Range: | +10°C to +40°C |
| Storage Temperature Range: | -20°C to +60°C |
Features
- Wavelength: 532 nm
- Pulse Energy: Up to 40 µJ
- Pulse Duration: 1.3 ns
- Pulse Repetition Rate: 100 Hz
- Beam Quality (M²): < 1.5
- Single Longitudinal Mode (SLM): Ensures stable and precise frequency emission
- Compact Design: Dimensions of 30mm x 50mm x 15mm^3
Applications
- Scientific Research: Ideal for various research applications requiring precise laser pulses
- LIDAR Systems: Well-suited for LIDAR (Light Detection and Ranging) applications
- Material Processing: High pulse energy for efficient material cutting and ablation
- Spectroscopy: Offers stable and narrow linewidth for accurate spectral analysis
- OEM Integration: Compact design facilitates seamless integration into OEM equipment
Frequently Asked Questions
What is the SB1-532-0.3-100 532nm Microchip Laser?
The SB1-532-0.3-100 532nm Microchip Laser is a short nanosecond pulsed, 0.3uJ, low SWaP, ultra-compact, 100 kHz, passively Q-switched, DPSS laser.
What are the key features of the SB1-532-0.3-100 532nm Microchip Laser?
The key features of the SB1-532-0.3-100 532nm Microchip Laser are 532 nm popular wavelength, < 400ps sub-ns pulse duration, 0.3uJ energy per pulse, Single Longitudinal Mode with M^2 of 1.3, and an all-in-one miniature design.
What are the applications of the SB1-532-0.3-100 532nm Microchip Laser?
The SB1-532-0.3-100 532nm Microchip Laser has found applications in Biophotonics, LIBS, LiDAR, Telemetry, Laser manufacturing, Micromachining, Spectroscopy, and Raman spectroscopy.
What are the technical specifications of the SB1-532-0.3-100 532nm Microchip Laser?
The technical specifications of the SB1-532-0.3-100 532nm Microchip Laser include output wavelength of 532 nm, pulse repetition rate of 100 kHz, pulse energy > 0.3 uJ, pulse width < 400 ps, peak power > 0.75 kW, and beam quality (M2) < 1.3.
What options are available for the SB1-532-0.3-100 532nm Microchip Laser?
The options available for the SB1-532-0.3-100 532nm Microchip Laser include beam expander and collimator, heat-sink, development kit, and quick start/evaluation kit.
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