SB1-266 1.3 ns Microchip Laser 266nm

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Specifications

Avg. Power: 0.001 W
Wavelength: 266 nm
Repetition Rate: 1 – 10 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 1.3 ns
Pulse-to-Pulse Stability (RMS): 5 %
Cooling: Air
Peak Power: >0.4 kW
Short Term Output Energy Instability (St.Dev. Over > 10000 Samples): <3 %
Long Term Output Power Instability (Power Log Over 24 Hours): <5 %
Output Beam Diameter At Exit Aperture (1/e2) Without Beam Expander: <2 mm
Secondary Output Wavelength: 532 nm
Beam Ellipticity (axes Ratio): >0.80 min
Warm Up Time (after Cold Start): <5 min
Power Consumption: <20 W
Mechanical Package: SB1
Operational Temperature Range: +10 to +40 ℃
Storage Temperature Range: -20 to +60 °C
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Features

Options Available:

  • Beam Expander and Collimator
  • Heat-sink
  • Development Kit
  • Quick Start/Evaluation Kit

Applications

  • Laser Marking: Ideal for precision marking on various materials due to its high peak power and short pulse width.
  • Micromachining: Suitable for applications requiring fine detail and minimal thermal impact, such as drilling and cutting of small features.
  • Scientific Research: Used in laboratories for experiments requiring a stable and precise UV laser source.
  • Fluorescence Excitation: Effective for applications in spectroscopy and microscopy where UV excitation is needed.
  • Semiconductor Inspection: Utilized in the inspection of semiconductor wafers and components due to its high beam quality and stability.
  • Material Processing: Applicable in processes like ablation and surface structuring where controlled energy delivery is crucial.
  • Biomedical Applications: Used in procedures that require precise and controlled laser energy delivery.