Rigel g200 High Power Diode Pumped Short Pulse Laser

Specifications

Avg. Power: 200 W
Wavelength: 532 nm
Repetition Rate: 10 – 30 kHz
Spatial Mode (M^2): 28
Pulse Duration: 75 ns
Pulse-to-Pulse Stability (RMS): 1 %
Cooling: Water-to-Water
Pulse Energy: 20 mJ
Divergence: 6 mrad
Power Stability: 0.5%
Typical Fibre Core: 400 μm
Supply Voltage: 3-phase N+E, 220 or 400 VAC (±10%)
Supply Frequency: 50 or 60 Hz
Nominal Power Consumption: 13 kVA
Gas Purge: N2 or Air (Grade N5.0, <1 ppm THC)
Laser Dimensions: 1600 x 500 x 215 mm
Control Rack Dimensions: 1195 x 600 x 970 mm
Environmental Conditions Temp: 15 - 32°C
Environmental Conditions RH: <60% (90% max, non condensing)
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Features


  • High Power Output: Achieve up to 200 W of average power with the Rigel g200, ideal for high-volume industrial applications.

  • Q-Switched, Intra-Cavity Frequency Doubled Laser: Delivers high energy efficiency and performance with a wavelength of 532 nm.

  • Pulse Energy: Capable of delivering pulse energy up to 20 mJ for demanding applications.

  • Beam Quality: Features a multi-mode beam with an M2 value of 28, ensuring optimal performance for various applications.

  • Excellent Stability: Provides exceptional power stability with a variation of only 0.5% (1σ).

  • Condition Monitoring: Built-in monitoring systems ensure reliable operation and maintenance.

  • Optional Fibre Delivery: Offers flexibility with optional round or square fibre delivery systems.

  • Computer Controlled Attenuation: Allows precise control and adjustment of laser output for specific requirements.

  • Optional Repetition Frequency Optimisation: Tailor the repetition frequency to match specific application needs.

  • Robust Design: Features a rugged head design with a universal control system for easy integration with OEM equipment and process lines.

Applications


  • Photovoltaic Processing

  • Poly-Silicon Annealing

  • Hard Materials Processing

  • Micro Machining

  • Ti:Sapphire Pumping