976 Single-Frequency DBR Laser Diode

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Specifications

Center Wavelength: 0.976 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 500 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate:: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features


  • High Optical Power Output: Available in low-power (40–200 mW) and high-power (80–350 mW) versions

  • Single-Frequency Operation: Narrow linewidth (≤500 kHz) for precise wavelength stability

  • Excellent Beam Quality: Fundamental spatial mode with low divergence (6° × 28° to 8° × 32° FWHM)

  • Superior Spectral Purity: High SMSR (≥40 dB) ensures minimal mode competition

  • Tunable Wavelength Control: Temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA

  • Reliable Performance: Passivated facets and monolithic GaAs structure for long-term stability

  • Flexible Packaging Options: CoS, TO-8, C-Mount, and TOSA configurations available

  • High Polarization Extinction Ratio: Up to 20 dB for applications requiring strong polarization control

Applications


  • Optical Coherence Tomography (OCT): High-resolution biomedical imaging applications

  • Biomedical Sensing: Precise detection and analysis in medical diagnostics

  • Spectroscopy and Metrology: Accurate spectral measurements in scientific research

  • Precision Fiber Optic Communications: Integration into advanced optical network systems

  • Quantum Optics and Atomic Physics: Ideal for experiments requiring narrow-linewidth lasers