935 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.935 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features


  • Monolithic GaAs Technology: Ensures a stable and high-performance laser output

  • Single Spatial Mode Beam: Delivers highly collimated and focused output

  • High Power Output: Power range of 80-180 mW, with a maximum optical power of 240 mW at 350 mA

  • Polarization Extinction Ratio: Ensures a -20 dB extinction ratio for efficient polarization

  • Slope Efficiency: High slope efficiency of 0.9 W/A for excellent energy conversion

  • Side Mode Suppression Ratio (SMSR): Achieves -40 dB for superior signal integrity

Applications


  • Ytterbium-Based Atomic Spectroscopy: Ideal for precision measurements in ytterbium-based spectroscopy applications

  • Two-Photon Microscopy: Used in advanced imaging and research involving two-photon absorption

  • Quantum Research and Optics: Suited for experiments requiring precise and stable laser output

  • Scientific Instrumentation: Provides consistent performance in various high-demand research and industrial tools

  • Precision Measurements: Perfect for high-accuracy applications requiring fine-tuned wavelength control