866.214 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.866 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features

Nominal Wavelength: 866.214 nm ± 0.6 nm for precision spectroscopy applications
High Power: Operates in the range of 80–240 mW with a maximum output of 240 mW
Slope Efficiency: 0.9 W/A, ensuring efficient power conversion
Low Threshold Current: Nominal 50 mA for low-power operation
Single Spatial Mode: Delivers high-quality output with passivated facets for increased reliability
Spectroscopy Certified: Guaranteed to hit the Ca+ cooling transition (Ca+ CT) ± 10°C from room temperature

Applications

Atomic Spectroscopy: Ideal for calcium ion (Ca+) cooling transition (Ca+ CT) applications in precision spectroscopic measurements
Laser Cooling and Trapping: Perfect for experiments involving laser cooling and trapping of atoms
Optical Communications: Supports high-performance optical communication systems requiring precise wavelength management
Quantum Computing and Research: Useful in quantum optics experiments for coherent photon generation
Precision Measurement Systems: Suitable for systems requiring high reliability and accurate wavelength performance