854.209 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.854 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
Document icon Download Data Sheet Download icon

Features


  • High Optical Power: Delivers an optical power range of 80–240 mW

  • Single Spatial Mode Beam: Ensures high beam quality for precise measurements

  • Spectroscopy Certified: Guaranteed wavelength accuracy for Ca+ cooling transition (±10°C from room temperature)

  • Temperature Stability: Offers excellent temperature tuning rate of 0.06 nm/°C

  • Low Threshold Current: Nominal threshold current of 50 mA for efficient operation

  • Passivated Facets: Provides enhanced reliability and longevity for demanding environments

Applications


  • Calcium Ion Spectroscopy: Essential for atomic spectroscopy and precise calcium ion (Ca+) applications

  • Atomic Spectroscopy: Ideal for use in advanced spectroscopy setups for scientific research

  • Laser Cooling and Trapping: Suitable for calcium ion-based cooling transition (Ca+ CT) applications in precision experiments

  • Precision Optical Systems: Used in optical systems requiring high spectral accuracy and stable performance