810nm Single-Frequency DBR Laser Diode

Name: 810nm Single-Frequency DBR Laser Diode
Brand: Photodigm Inc.
Availability: InStock

Description

The 810 nm DBR Laser Diode from Photodigm offers high performance and reliability, utilizing advanced Gallium Arsenide (GaAs) single-frequency laser technology. These edge-emitting diodes provide a high-power output range from 80 mW to 180 mW and are ideal for use in biomedical diagnostics and imaging applications, particularly as low-noise pump sources.

With a nominal operating wavelength of 810 nm ±0.6 nm, the diode features a single spatial mode beam and passivated facets for enhanced reliability and extended lifespan. It is available in various packaging options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA).

The laser operates within a temperature range of 5°C to 70°C and provides a nominal slope efficiency of 0.9 W/A, with a threshold current of 60 mA. This versatile laser diode is an excellent choice for applications requiring stable performance and precise output.

Specifications

Center Wavelength:	0.81 um
Output Power:	80 mW
Operating Current, Max (CW & Pulsed):	250 mA
Optical Power At Max Operating Current:	180 mA
Storage Temperature:	0 to +75 °C
Nominal Laser Linewidth @ LIV Current:	500 kHz
Temperature Tuning Rate:	0.06 nm/ºC
Polarization Extinction Ratio:	-20 dB
Operating Temperature (Chip):	+5 to +45 °C
Beam Divergence @ FWHM (θ\|\| X θ⊥):	6 x 28 º
Laser Forward Voltage:	2 V

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Features

High Power Output: Provides optical power up to 180 mW at maximum operating current (250 mA)
Low-Noise Performance: Ideal for sensitive biomedical imaging and diagnostics applications
Passivated Facets: Enhances reliability and ensures long-term durability
Efficient Operation: Features a nominal slope efficiency of 0.9 W/A and threshold current of 60 mA
Compact and Versatile Packaging: Available in Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA) options

Applications

Biomedical Diagnostics: Used as a pump source for low-noise applications in medical imaging and diagnostics
Imaging Systems: Provides stable, high-power output for laser-based imaging technologies
Material Processing: Utilized in precise laser material processing applications
Scientific Research: Ideal for precision measurement and analytical instrumentation

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Ships from:

United States

Sold by:

Photodigm Inc.

On FindLight:

since 2019

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Frequently Asked Questions

What is the operating wavelength of the 810 nm DBR Laser Diode?

The 810 nm DBR Laser Diode operates at a nominal wavelength of 810 nm with a tolerance of ±0.6 nm. This makes it ideal for applications that require precise wavelength characteristics.

What is the power range of the 810 nm DBR Laser Diode?

The power range of the 810 nm DBR Laser Diode is between 80 mW and 180 mW. This high-power output ensures stable performance for demanding applications like biomedical imaging and diagnostics.

What packaging options are available for the 810 nm DBR Laser Diode?

The 810 nm DBR Laser Diode is available in multiple packaging options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA), providing flexibility for various integration needs.

What is the maximum operating current for this laser diode?

The maximum operating current for the 810 nm DBR Laser Diode is 250 mA (CW & Pulsed). At this current, the diode delivers a maximum optical power of 180 mW.

What temperature range does the 810 nm DBR Laser Diode support?

The 810 nm DBR Laser Diode operates effectively within a case temperature range of 5°C to 70°C. For the laser chip itself, the operating temperature range is from 5°C to 45°C, ensuring reliable performance in various environmental conditions.