739 nm Distributed Bragg Reflector Laser Diode

Specifications

Center Wavelength: 0.739 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Document icon Download Data Sheet Download icon

Features


  • Single-Frequency Operation: Monolithic DBR structure ensures a stable, single-wavelength output

  • High Optical Power: Output power up to 80 mW with a slope efficiency of 0.8 W/A

  • Narrow Linewidth: Laser linewidth of 500 kHz, ideal for high-resolution spectroscopy

  • Superior Spectral Purity: Side Mode Suppression Ratio (SMSR) exceeding 40 dB

  • Excellent Wavelength Stability: Temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA

  • Multiple Packaging Options: Available in CoS, C-Mount, TO-8, and TOSA configurations

  • Reliable and Durable: Passivated facets ensure long-term performance and stability

Applications


  • Atomic Spectroscopy: Supports Yb-based frequency-doubled atomic research and laser cooling

  • Raman Spectroscopy: Provides high spectral resolution for molecular analysis

  • Quantum Optics: Essential for quantum communication, sensing, and precision metrology

  • Optical Pumping: Used in magneto-optical trapping and precision optical alignment

  • Laser Interferometry: Ideal for high-precision measurements requiring stable single-frequency output