1305 nm 16 mW FP LASER DIODE
Description
QLF131F-P16 is a 1305 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to 110 deg.C temperature. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumption.
1305 nm 16 mW FP LASER DIODE
Specifications |
|
|---|---|
| Center Wavelength: | 1.305 um |
| Output Power: | 22 mW |
Features
- 1 05nm FP-LD Chip
- Wide temperature operation: -10 to 110C
Applications
- Optical Communications
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
External Vendor
Claim Cybel LLC Page to edit and add data
Frequently Asked Questions
The maximum light output power of the QLF131F-P16 laser diode chip is 16 mW.
The QLF131F-P16 laser diode chip can operate at temperatures up to 110 degrees Celsius.
The slope efficiency of the QLF131F-P16 laser diode chip is 0.33 W/A at 25 degrees Celsius and 0.25-0.30 W/A at 85 degrees Celsius.
The spectral width of the QLF131F-P16 laser diode chip is 2.7 nm at 25 degrees Celsius and 2.2 nm at 85 degrees Celsius.
The wavelength of the QLF131F-P16 laser diode chip is 1305 nm.