1090 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 1.09 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features


  • Single-Frequency Operation: Provides a stable, narrow linewidth (~500 kHz) for precision applications

  • High Power Output: Available in 40–180 mW configurations for diverse applications

  • Low Threshold Current: Nominal threshold current of 50 mA, ensuring energy-efficient operation

  • Excellent Wavelength Stability: Temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA

  • Multiple Packaging Options: Available in CoS, 9MM TO-8, C-Mount, and TOSA with MHF and VPS lens add-ons

  • High Side Mode Suppression Ratio (SMSR): Ensures spectral purity with 40 dB suppression

Applications


  • Atomic Spectroscopy: Optimized for strontium-based (Sr) atomic transitions

  • High-Precision Metrology:  Suitable for interferometry and precision measurement applications

  • Laser Cooling and Trapping: Used in quantum optics and atomic physics experiments

  • Optical Sensing Systems: Ideal for environmental and industrial sensing applications

  • Scientific Research: Supports cutting-edge developments in photonics and quantum technologies