30W Picosecond DPSS Laser Source
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Ships from:
China
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On FindLight:
since 2016
Description
Suzhou Delphi Laser Co., Ltd. (苏州德龙激光有限公司) presents the EPEE-30 Picosecond Laser, a cutting-edge solution in laser technology. Located at NO. 77 Suhong Middle Rd, SIP, Suzhou, Jiangsu, China, this company is renowned for its innovative approach in developing laser systems. The EPEE-30 is meticulously engineered to offer superior performance through the integration of free-space solid-state amplifier and fiber laser technology.
The EPEE-30 is designed to deliver an impressive output power of 30W, with pulse energies reaching 200µJ and pulse widths of less than 15 picoseconds. This advanced laser system utilizes a fiber seed, which enhances its stability, compactness, and operational flexibility compared to traditional solid-state seed lasers. The incorporation of a solid-state amplifier ensures high pulse energies while maintaining excellent beam quality, making it a reliable choice for various precision applications.
With its compact design, the EPEE-30 is ideal for environments where space is at a premium. This laser system is assembled in a 1000 class cleanroom, ensuring the highest standards of production quality. It also features RS232 and external GATE control, offering users enhanced control over its operations. Suzhou Delphi Laser Co., Ltd. has crafted the EPEE-30 to meet the rigorous demands of modern industrial and scientific applications, making it a versatile tool for professionals seeking precision and reliability.
30W Picosecond DPSS Laser Source
Specifications |
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|---|---|
| Avg. Power: | 30 W |
| Wavelength: | 1064 nm |
| Repetition Rate: | 150 – 1000 kHz |
| Spatial Mode (M^2): | 1.3 |
| Pulse Duration: | 0.015 ns |
| Pulse-to-Pulse Stability (RMS): | 3 % |
| Cooling: | Water-to-Water |
| Model Number: | EPEE-30 |
Features
- High Average Power: Over 30W at 1MHz, ensuring robust performance for demanding applications.
- Versatile Pulse Repetition Rate: Adjustable from 150 to 1000kHz to suit various processing needs.
- Exceptional Beam Quality: TEM00 mode with M2 < 1.3 for precise and high-quality output.
- Ultra-Short Pulse Width: Less than 15ps, ideal for precision machining and minimal thermal impact.
- High Pulse Energy: Greater than 200µJ, providing powerful bursts for effective material processing.
- Burst Mode Availability: Offers enhanced control over pulse sequences for specialized applications.
- Compact Design: Space-efficient, making it suitable for integration into various systems.
- Advanced Control Options: Features RS232 and external GATE control for seamless integration and operation.
- Cleanroom Assembly: Assembled in a 1000 class cleanroom, ensuring high reliability and performance.
- Stable and Reliable: Average power stability of <2% rms over 8 hours and pulse-to-pulse instability of <3% rms.
- Precision Beam Characteristics: Beam divergence of <2 mrad (full angle) with a beam roundness >90%.
- Environmental Adaptability: Operates in ambient temperatures from -10 to 50℃ and relative humidity of 15 – 30%.
- Rapid Warm-up: Ready to operate in less than 10 minutes, minimizing downtime.
- Wide Voltage Range: Operates on 90 – 260V, accommodating various power supplies.
Applications
- Glass Cutting and Drilling: Enables high-speed precision cutting with minimal thermal effects
- Semiconductor Micromachining: Ideal for cutting wafers and micro-structuring circuits
- Precision Micromachining: Suitable for detailed micro-scale industrial processing
- Sapphire Cutting and Drilling: Effective for hard material cutting with clean edges
- Thin Film Cutting: Delivers superior results for multilayer and thin substrate processing
- Scientific Research Applications: Supports ultrafast laser applications in laboratories
Frequently Asked Questions
The EPEE-30 laser source can be used for glass cutting and drilling, semiconductor cutting, precision machining, sapphire cutting and drilling, thin film cutting, and scientific applications.
The warm-up time for the EPEE-30 laser source is less than 10 minutes.
The EPEE-30 laser source uses water-cooling for its cooling system.
The pulse width of the EPEE-30 laser source is less than 15ps.
The EPEE-30 laser source produces 30W of output power.