1310 nm FP LASER DIODE
Description
QLF1312-P10 is a 1310 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to 2.5Gbps speed. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumption.
1310 nm FP LASER DIODE
Specifications |
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|---|---|
| Center Wavelength: | 1.3 um |
| Output Power: | 15 mW |
Features
- 1 00nm FP-LD Chip
- Wide temperature operation: -10 to 85C
Applications
- Optical Communications
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
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Frequently Asked Questions
The LD chips are shipped on an antistatic sheet of 6 inch - ring, and the product name, lot number, and quantity are printed on labels.
The QLF1312-P10 realizes excellent temperature characteristics due to its equipped active layers, and can operate in temperatures ranging from -10 to 85C.
The maximum light output power of the QLF1312-P10 is 15 mW.
The QLF1312-P10 can be used for telecom and datacom applications up to 2.5Gbps speed.
The QLF1312-P10 is a 1310 nm quantum dot FP laser diode chip.