Description
QLF1312-P10 is a 1310 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to 2.5Gbps speed. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumption.
1310 nm FP LASER DIODE
Specifications
| Center Wavelength: | 1.3 um |
|---|---|
| Output Power: | 15 mW |
Features
- 1 00nm FP-LD Chip
- Wide temperature operation: -10 to 85C
Applications
- Optical Communications
Frequently Asked Questions
How are the LD chips shipped and labeled?
The LD chips are shipped on an antistatic sheet of 6 inch - ring, and the product name, lot number, and quantity are printed on labels.
What are the temperature characteristics of the QLF1312-P10?
The QLF1312-P10 realizes excellent temperature characteristics due to its equipped active layers, and can operate in temperatures ranging from -10 to 85C.
What is the maximum light output power of the QLF1312-P10?
The maximum light output power of the QLF1312-P10 is 15 mW.
What is the maximum speed that the QLF1312-P10 can be used for?
The QLF1312-P10 can be used for telecom and datacom applications up to 2.5Gbps speed.
What is the wavelength of the QLF1312-P10 laser diode chip?
The QLF1312-P10 is a 1310 nm quantum dot FP laser diode chip.
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