SB1-532-20-1: Microchip Laser

Specifications

Avg. Power: 0.02 W
Wavelength: 532 nm
Repetition Rate: 0.001 – 1 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 1.3 ns
Cooling: Air
Pulse Energy: > 20 µJ
Beam Diameter At Exit Aperture: < 0.3 nm
Beam Divergence (half Angle): < 4 mrad
Beam Ellipticity (Axes Ratio): > 0.80
Warm-Up Time (Cold Start): < 5 min
Operational Temperature Range: -1 to +40 °C
Storage Temperature Range: -20 to +60 °C
Mechanical Package: SB1
Optional Features: Beam Expander, Collimator, Heat-sink, Development Kit, Quick Start Kit
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Features


  • Wavelength: 532 nm

  • Pulse Width: < 1.3 ns

  • Pulse Energy: > 20 µJ

  • Peak Power: > 15 kW

  • Beam Quality (M²): < 1.3

  • Short-Term Energy Instability: < 3%

  • Long-Term Power Instability: < 5% over 24 hours

  • Beam Divergence: < 4 mrad (without beam expander)

  • Beam Diameter: < 0.3 mm at exit aperture

  • Warm-Up Time: < 5 min after cold start

  • Power Consumption: < 20 W

  • Temperature Range: +10°C to +40°C operational, -20°C to +60°C storage

Applications


  • Laser Material Processing: Ideal for applications requiring high peak power and precise pulse control

  • Micromachining: Used in fine machining processes where high energy density and minimal thermal effects are essential

  • Biomedical Research: Perfect for advanced research requiring high-energy, short-pulse lasers for spectroscopy and imaging

  • Optical Sensing: Applicable in high-precision sensing and measurement systems

  • LIDAR Systems: Well-suited for LIDAR applications needing high repetition rates and short pulses