Rigel g400 High Power Diode Pumped Short Pulse Laser

Specifications

Avg. Power: 400 W
Wavelength: 532 nm
Repetition Rate: 10 – 30 kHz
Spatial Mode (M^2): 28
Pulse Duration: 75 ns
Pulse-to-Pulse Stability (RMS): 1 %
Cooling: Water-to-Water
Pulse Energy: 40 mJ
Divergence: 6 mrad
Power Stability: 0.5%
Typical Fibre Core: 600 μm
Supply Voltage: 3-phase N+E, 220 or 400 VAC (±10%)
Supply Frequency: 50 or 60 Hz
Nominal Power Consumption: 20 kVA
Gas Purge: N2 or Air (Grade N5.0, <1 ppm THC)
Laser Dimensions: 1900 x 600 x 235 mm
Control Rack Dimensions: 1195 x 600 x 970 mm
Environmental Conditions: Temp 15 - 32°C and RH <60% (90% max, non condensing)
Document icon Download Data Sheet Download icon

Features


  • High Power Output: The Rigel g400 delivers high average powers up to 400 W in an unpolarized multi-mode beam at a wavelength of 532 nm.

  • Pulse Energy: Achieves pulse energy up to 40 mJ, suitable for demanding applications.

  • Exceptional Beam Quality: With an M2 value of 28, ensuring excellent stability for precision tasks.

  • Versatile Output Options: Offers optional dual polarized outputs, single unpolarized output, and fiber delivery in round or square configurations.

  • Repetition Frequency Optimization: Optional feature for enhanced performance tailored to specific needs.

  • Robust Design: Features a well-proven rugged head design for durability in industrial environments.

  • Universal Control System: State-of-the-art architecture allows for simple synchronization with OEM equipment and process lines.

  • Industrial Applications: Ideal for photovoltaic processing, poly-silicon annealing, hard materials processing, micro machining, and Ti:Sapphire pumping.

  • Environmental and Facility Requirements: Operates efficiently under temperature conditions of 15 - 32°C and relative humidity <60% (90% max, non-condensing).

Applications


  • Photovoltaic Processing

  • Poly-Silicon Annealing

  • Hard Materials Processing

  • Micro Machining

  • Ti:Sapphire Pumping