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Pulsed Semiconductor Lasers (Tuning Range Around Center Wavelength: <= 200nm)

The dual aiming laser package from OSI Laser Diode, Inc. is a sophisticated assembly that integrates a 905 pulsed laser diode and a 650nm laser diode, meticulously mounted side by side on a unified platform. This innovative design ensures that the emission pattern of both laser diodes is precisely aligned along the package axis, ...

Specifications

Output Power (avg): 3 W
Wavelength: 0.905 um
Pulse Duration: 100 – 100 ns
Tuning Range Around Center Wavelength: <= 200nm
Spectral Width FWHM: 5 nm
OSI Laser Diode Inc. provides an extremely high brightness CVLL 1550nm pulsed laser diode capable of up to 75 Wattsoutput power. The CVLL devices are well suited to most range finding applications requiring “eye safe” operation.

Specifications

Output Power (avg): 125 W
Wavelength: 1.55 um
Pulse Duration: 150 – 150 ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Power (min): 10 – 125 W
The LHCVN Series from OSI Laser Diode Inc. represents a cutting-edge solution in the realm of hybrid laser diodes, specifically engineered for pulsed operations. These laser diodes are renowned for their high peak power emission, making them a reliable choice for a variety of demanding applications. With a peak emission wavelength ...

Specifications

Output Power (avg): 200 W
Wavelength: 0.905 um
Pulse Duration: 10 – 10 ns
Tuning Range Around Center Wavelength: <= 200nm
Emitter Area: 200 X 10 - 200 X 480 um
Stable Output from -40°C to +85°CSingle & Stacked Devices up to 375WFiber Coupled Devices up to 188WHigh Reliability / High Efficiency

Specifications

Output Power (avg): 375 W
Wavelength: 0.915 um
Pulse Duration: 100 – 100 ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Wavelength: 895 – 915 nm
• High Eciency / High Reliability• Stable Output from -40°C to +85°C• Single and Stacked Devices up to 100Watts• 850nm and 905nm Wavelengths• Hermetic Package

Specifications

Output Power (avg): 100 W
Wavelength: 0.915 um
Pulse Duration: 100 – 100 ns
Tuning Range Around Center Wavelength: <= 200nm
Spectral Width: 5 nm
Introducing OSI Laser Diode, Inc.'s 850nm Laser Modules OSI Laser Diode, Inc. presents its state-of-the-art 850nm laser modules, meticulously engineered for fiber optic instruments that demand high optical power coupled with low power consumption. These modules are housed in hermetic packages that ensure durability and reliability, ...

Specifications

Output Power (avg): 1 W
Wavelength: 0.85 um
Pulse Duration: 50 – 50 ns
Tuning Range Around Center Wavelength: <= 200nm
Threshold Current (typ): .1-.25 A
**Introducing the 1550nm Multi-Junction Pulsed Laser Diodes** The 1550nm Multi-Junction Pulsed Laser Diodes are engineered to deliver exceptional performance in a variety of demanding environments. Designed with precision, these laser diodes offer a peak wavelength centered around 1550nm, making them ideal for applications that ...

Specifications

Output Power (avg): 75 W
Wavelength: 1.55 um
Pulse Duration: 150 – 150 ns
Tuning Range Around Center Wavelength: <= 200nm
Beam Spread: 12 x 37 degrees
On FindLight marketplace you will find 7 different Pulsed Semiconductor Lasers (Tuning Range Around Center Wavelength: <= 200nm) from top global suppliers. Compare features, request pricing, and connect instantly with manufacturers — no registration required.