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Pulsed Semiconductor Lasers (Tuning Range Around Center Wavelength: <= 200nm)

Dual Aiming Laser CVDR 46650--TO5T
OSI Laser Diode Inc.
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Dual Aiming Laser CVDR 46650--TO5T
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Laser package contains a 905 pulsed laser diode (CVD 46) and a 650nm laser diode mounted side by side(distance between the centers of emission = 720um) on a common platform (+, case, positive). Theemission pattern of the two laser die will be centered on the package axis to within +/- 0.010 in.

Specifications
Output Power (avg): 3 W
Wavelength: 0.905 um
Pulse Duration: 100 – 100 ns
Tuning Range Around Center Wavelength: <= 200nm
Spectral Width FWHM: 5 nm
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1550nm High Brightness Pulsed Laser Diodes
OSI Laser Diode Inc.
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1550nm High Brightness Pulsed Laser Diodes
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OSI Laser Diode Inc. provides an extremely high brightness CVLL 1550nm pulsed laser diode capable of up to 75 Wattsoutput power. The CVLL devices are well suited to most range finding applications requiring “eye safe” operation.

Specifications
Output Power (avg): 125 W
Wavelength: 1.55 um
Pulse Duration: 150 – 150 ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Power (min): 10 – 125 W
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Hybrid Laser Diodes for Pulsed Operations
OSI Laser Diode Inc.
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Hybrid Laser Diodes for Pulsed Operations
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The LHCVN series incorporates a pulsed laser firing circuit into the same package as the laser diode. The hybridization of the driver permits much narrower pulse widths and faster rise times at lower voltage requirements than discretelaser drivers. The LHCVN series is compatible with all OSI LaserDiode, Inc standard MOCVD laser ...

Specifications
Output Power (avg): 200 W
Wavelength: 0.905 um
Pulse Duration: 10 – 10 ns
Tuning Range Around Center Wavelength: <= 200nm
Emitter Area: 200 X 10 - 200 X 480 um
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High Power Monolithic Stack Pulsed Laser Diodes
OSI Laser Diode Inc.
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High Power Monolithic Stack Pulsed Laser Diodes
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Stable Output from -40°C to +85°CSingle & Stacked Devices up to 375WFiber Coupled Devices up to 188WHigh Reliability / High Efficiency

Specifications
Output Power (avg): 375 W
Wavelength: 0.915 um
Pulse Duration: 100 – 100 ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Wavelength: 895 – 915 nm
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High Power Pulsed Laser Diodes
OSI Laser Diode Inc.
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High Power Pulsed Laser Diodes
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• High Eciency / High Reliability• Stable Output from -40°C to +85°C• Single and Stacked Devices up to 100Watts• 850nm and 905nm Wavelengths• Hermetic Package

Specifications
Output Power (avg): 100 W
Wavelength: 0.915 um
Pulse Duration: 100 – 100 ns
Tuning Range Around Center Wavelength: <= 200nm
Spectral Width: 5 nm
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PULSED 850nm Instrument Laser Modules
OSI Laser Diode Inc.
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PULSED 850nm Instrument Laser Modules
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OSI Laser Diode, Inc.’s 850nm laser modules are designed for use in fiber optic instruments where high optical power and low powerconsumption are required. All packages contain LDI’s high reliability laser chips. The low profile style package is designed for use withnarrow high current pulses. Devices can be custom tailored to meet ...

Specifications
Output Power (avg): 1 W
Wavelength: 0.85 um
Pulse Duration: 50 – 50 ns
Tuning Range Around Center Wavelength: <= 200nm
Threshold Current (typ): .1-.25 A
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1550nm Multi Junction Pulsed Laser Diode
OSI Laser Diode Inc.
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1550nm Multi Junction Pulsed Laser Diode
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“Eye Safe”• High Efficiency• 90μm and 350μm Emitter Widths• Stable Output from -40°C to +85°C• Single and Stacked Devices up to 60Watts• Hermetic Package• RoHS Compliant

Specifications
Output Power (avg): 75 W
Wavelength: 1.55 um
Pulse Duration: 150 – 150 ns
Tuning Range Around Center Wavelength: <= 200nm
Beam Spread: 12 x 37 degrees
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On FindLight marketplace you will find 7 different Pulsed Semiconductor Lasers (Tuning Range Around Center Wavelength: <= 200nm) from top global suppliers. Compare features, request pricing, and connect instantly with manufacturers — no registration required.