High-Quality Silicon Wafer for Semiconductor and Photonics Applications

Specifications

Substrate Material: Si
Antireflection Coating: Uncoated
Diameter: 304.8 mm
Surface Quality: 20-10 scratch-dig, 40-20 scratch-dig
Surface Flatness: lambda/4
Thickness: 25 mm
Type: P-Type, N-Type, or Semi-Insulating
Document icon Download Data Sheet Download icon

Features


  • Wide Range of Sizes: Available in diameters from 25.4 mm (1 inch) to 304.8 mm (12 inches), offering flexibility for various production needs

  • Adjustable Thickness: Thicknesses range from 25 µm to 1 mm, suitable for different fabrication processes

  • Material Options: Manufactured from high-quality CZ (Czochralski) or FZ (Float Zone) silicon for optimal purity and performance

  • Multiple Orientations: Crystallographic orientations include <100>, <111>, and <110>, tailored to specific semiconductor applications

  • Versatile Conductivity Types: Available in P-type, N-type, or semi-insulating, ensuring compatibility with various device designs

  • High Precision: Designed to meet stringent industry standards for thickness, orientation, and conductivity

Applications


  • Semiconductor Manufacturing: Ideal for fabricating integrated circuits, MEMS devices, and other semiconductor components

  • Photonics Industry: Perfect for use in the production of sensors, lasers, and other photonic devices

  • Research and Development: Essential for advanced research in material sciences, nanotechnology, and microelectronics

  • Solar Energy: Applicable for photovoltaic cell production, offering high purity and performance in solar energy applications

  • Optoelectronic Devices: Suited for applications requiring precise control of electrical and optical properties in optoelectronic components