Sapphire Wafer for Semiconductor and Photonics Applications

Specifications

Substrate Material: Sapphire
Antireflection Coating: Uncoated
Diameter: 203.2 mm
Surface Quality: 60-40 scratch-dig
Surface Flatness: lambda/4
Thickness: 1 mm
Total Thickness Variation: Lower than 10 µm
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Features

  • High Purity Material: Composed of 99.999% pure AL₂O₃ monocrystalline sapphire for superior optical and thermal performance
  • Custom Dimensions: Available in sizes from 1 inch (25.4 mm) to 8 inches (203.2 mm) for versatile applications
  • Varied Thickness: Thickness options from 150 µm to 1 mm, accommodating a range of uses
  • C-Axis Orientation: Specifically oriented for optimal performance in semiconductor and photonics applications
  • Low Total Thickness Variation: TTV of less than 10 µm ensures high-quality substrate characteristics

Applications

  • Semiconductor Manufacturing: Ideal for use in the production of semiconductor devices
  • Photonics: Suitable for optical devices, including lasers and waveguides
  • Optical Coatings: Serves as a substrate for high-performance optical coatings
  • Research and Development: Supports experimental setups in advanced material science