Ti:Sapphire Laser Crystal
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China
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On FindLight:
since 2019
Description
Titanium-doped sapphire, commonly known as Ti:Sapphire, is a highly regarded optically pumped, solid-state laser crystal. Known for its exceptional wavelength tunability, this crystal is capable of tuning across a broad range from 650 nm to 1100 nm, with a peak at 800 nm. This makes it one of the most versatile laser crystals available, capable of covering a wide spectrum of applications.
The short upper-state lifetime of just 3.2 milliseconds contributes to its high saturation power, making it challenging to pump using traditional methods like lamps or argon ion lasers. Instead, frequency-doubled Nd:YAG lasers are typically employed for this purpose. One of the standout features of the Ti:Sapphire laser is its ability to produce ultrashort pulses. Utilizing self-mode-locking technology, it can generate laser pulses with a pulse width as narrow as 6.5 femtoseconds, the shortest pulse width of any laser that can be directly output from the resonant cavity. This capability is invaluable in applications requiring precise and rapid laser pulses. Furthermore, through frequency-doubling technology, the laser beam's wavelength can extend from the blue spectrum to deep ultraviolet, with the potential to produce a 193 nm laser used in advanced lithography machines.
The Ti:Sapphire crystal also boasts a broad absorption pump band and preeminent output efficiency. Its high damage threshold and excellent thermal conductivity make it a robust choice for demanding environments. The material's physical and chemical properties, such as its hexagonal crystal structure and high thermal shock resistance, further enhance its suitability for various high-performance laser applications. With its unique combination of features, Ti:Sapphire remains a critical component in the development of femtosecond lasers, amplifiers, and tunable lasers across a range of scientific and industrial fields.
Ti:Sapphire Laser Crystal
Specifications |
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|---|---|
| Type Of Crystal: | Yb:YAG |
| Crystal Diameter: | 6 mm |
| Crystal Length: | 14 mm |
| AR Coating: | One side |
| Materials: | Ti3+:Al2O3 |
| Concentration: | (0.05~0.35) wt% |
| Orientation: | A-Axis within 5°，E-vector parallel to C-Axis |
| Figure Of Merit(FOM): | 100~300 |
| Laser Transition: | F3/2→F1/2 |
| Laser Wavelength: | 660-1200 nm |
| Central Emission: | 800 nm |
| Turnable Absorption Band: | 400-600 nm |
Features
- Wide Wavelength Tunability: Covers a range from 650-1100 nm, peaking at 800 nm, making it one of the widest tunable laser crystals.
- Broad Absorption Pump Band: Efficiently absorbs energy over a wide range of wavelengths, enhancing its versatility in various applications.
- Preeminent Output Efficiency: Provides superior performance with high laser output efficiency.
- Short Upper-State Lifetime: Features a short upper-state lifetime of 3.2 ms, which is crucial for high-speed applications.
- Narrow Locked Mode Width: Capable of producing extremely narrow laser pulses, as short as 6.5 fs, directly from the resonant cavity.
- High Damage Threshold: Withstands high power levels without damage, ensuring durability and reliability.
- Excellent Thermal Conductivity: Maintains performance even under high power conditions due to its superior thermal management.
Applications
- Femtosecond Ti:Sapphire Lasers: For ultrashort pulse generation in research and industry.
- Ti:Sapphire Amplifiers: High-energy pulse amplification.
- Tunable Laser Systems: Broad spectral coverage for spectroscopy and imaging.
- Optical Parametric Oscillators: Pump source for extended wavelength generation.
- Ultrafast Microscopy: High-resolution, time-resolved imaging.
- Semiconductor Lithography: Frequency-doubled deep UV laser at 193 nm.
Frequently Asked Questions
The narrowest laser pulse of all lasers that directly output from the resonant cavity is 6.5fs.
The tunable range of the Ti Sapphire Laser Crystal is 650-1100nm, with a peak at 800nm.
The upper-state lifetime of the Ti Sapphire Laser Crystal is short, at 3.2ms.
The wavelength of laser beam can cover a wide band from blue to deep ultraviolet, and produced 193 nm laser has been used in lithography machine.
Self-mode-locking technology is used to output laser pulse with pulse width as short as 6.5fs directly.