Ti:Sapphire Laser Crystal

Specifications

Type Of Crystal: Yb:YAG
Crystal Diameter: 6 mm
Crystal Length: 14 mm
AR Coating: One side
Materials: Ti3+:Al2O3
Concentration: (0.05~0.35) wt%
Orientation: A-Axis within 5°,E-vector parallel to C-Axis
Figure Of Merit(FOM): 100~300
Laser Transition: F3/2→F1/2
Laser Wavelength: 660-1200 nm
Central Emission: 800 nm
Turnable Absorption Band: 400-600 nm
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Features


  • Wide Wavelength Tunability: Covers a range from 650-1100 nm, peaking at 800 nm, making it one of the widest tunable laser crystals.

  • Broad Absorption Pump Band: Efficiently absorbs energy over a wide range of wavelengths, enhancing its versatility in various applications.

  • Preeminent Output Efficiency: Provides superior performance with high laser output efficiency.

  • Short Upper-State Lifetime: Features a short upper-state lifetime of 3.2 ms, which is crucial for high-speed applications.

  • Narrow Locked Mode Width: Capable of producing extremely narrow laser pulses, as short as 6.5 fs, directly from the resonant cavity.

  • High Damage Threshold: Withstands high power levels without damage, ensuring durability and reliability.

  • Excellent Thermal Conductivity: Maintains performance even under high power conditions due to its superior thermal management.

Applications


  • Femtosecond Ti:Sapphire Lasers: For ultrashort pulse generation in research and industry.

  • Ti:Sapphire Amplifiers: High-energy pulse amplification.

  • Tunable Laser Systems: Broad spectral coverage for spectroscopy and imaging.

  • Optical Parametric Oscillators: Pump source for extended wavelength generation.

  • Ultrafast Microscopy: High-resolution, time-resolved imaging.

  • Semiconductor Lithography: Frequency-doubled deep UV laser at 193 nm.