High Speed InGaAs PIN Photodiodes FD300 Series
Description
General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 300 microns in diameter.
High Speed InGaAs PIN Photodiodes FD300 Series
Specifications |
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|---|---|
| Diode Type: | InGaAs |
| Wavelength Of Operation: | 1300 nm |
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Frequently Asked Questions
The absolute maximum ratings for the FD300 series InGaAs PIN photodiode are: storage temperature of -40 to +100 °C, operating temperature of -40 to +85 °C, forward current of 25 mA, reverse current of 5 mA, and reverse voltage of 20 V.
The optical and electrical characteristics of the FD300 series InGaAs PIN photodiode include: responsivity of 0.80-0.90 A/W at 1300 nm and 0.85-0.95 A/W at 1550 nm, dark current of 1-5 nA at 5V, and rise/fall time of 0.4-1.5 ns at 5V.
The typical characteristics of the FD300 series InGaAs PIN photodiode include: spectral response (R vs λ), dark current vs reverse voltage, capacitance vs reverse voltage, and response to optical impulse pulse height.
The FD300 series InGaAs PIN photodiode is useful for a wide range of applications including infrared instrumentation and moderate speed communication systems.
The photosensitive area of the FD300 series InGaAs PIN photodiode is 300 microns in diameter.