High-Efficiency Pulsed Laser Systems for Demanding Applications

High-E Photonics

Specifications

Avg. Power: 100 W
Wavelength: 1500 nm
Repetition Rate: 10000 – 100000 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 0.1 ns
Pulse-to-Pulse Stability (RMS): 1 %
Cooling: Conductive
Wavelength: 1030-1064nm, 1500nm, 1670-2300nm, 1030nm & 1880nm
Pulse Energy: 1mJ to 100mJ, 1mJ, 1mJ to 100mJ, 1-100J
Average Power: 100W to 500W, 100W, 100W to 500W, Customer specific
Pulse Duration: Sub-picosecond to nanosecond, Picosecond to nanosecond, Sub-picosecond to nanosecond, Customer specific
M^2: <1.3, <1.3, <1.3, <1.5
Pulse Stability (STD/Mean): 0.83%
Beam Parameter M^2 X/Y: < 1.05
Astigmatism: 0.12
Asymmetry: 1.02
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Features


  • High Energy for Demanding Applications: Designed to meet the needs of high-intensity tasks, providing exceptional energy output.

  • Industry-Leading Efficiency: Engineered for superior performance, ensuring maximum efficiency in all applications.

  • Industrial Reliability: Proven stability in harsh environments, ensuring consistent performance and durability.

  • Precision Performance: Offers tailor-made pulse specifications for precision tasks.

  • Wavelength Options:

    • HEP-1030/1064: 1030-1064nm

    • HEP-1500: 1500nm

    • HEP-2000: 1670-2300nm

    • J-Class: 1030nm & 1880nm



  • Pulse Energy:

    • HEP-1030/1064: 1mJ to 100mJ

    • HEP-1500: 1mJ

    • HEP-2000: 1mJ to 100mJ

    • J-Class: 1-100J



  • Average Power:

    • HEP-1030/1064: 100W to 500W

    • HEP-1500: 100W

    • HEP-2000: 100W to 500W

    • J-Class: Customer specific



  • Pulse Duration:

    • HEP-1030/1064: Sub-picosecond to nanosecond

    • HEP-1500: Picosecond to nanosecond

    • HEP-2000: Sub-picosecond to nanosecond

    • J-Class: Customer specific



  • Beam Quality (M2):

    • HEP-1030/1064, HEP-1500, HEP-2000: <1.3

    • J-Class: <1.5



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Applications


  • Customer-specific pulse parameters or seed laser 

  • SHG, THG, HHG generation

  • Material processing