Yb:CaF2 Laser Crystal

Specifications

Type Of Crystal: TeO2
Crystal Diameter: 6 mm
Crystal Length: 20 mm
AR Coating: One side
Concentration Tolerance (atm%): 0.5 mol % ~ 30 mol %
Orientation: [111] or [100] < ±0.5°
Laser Transition: 2F5/2→2F7/2
Laser Wavelength: 1033/1050
Absorption Coefficient: 1.0 cm-1 ~ 7 cm-1
Pump Wavelength: 980 nm
Emission Band Width: 70 nm
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Features


  • Broad Emission Linewidth: 70 nm FWHM for sub-100 fs pulse generation.

  • Low Quantum Defect: Minimizes thermal load for efficient high-power operation.

  • Long Fluorescence Lifetime: 2.4 ms for high energy storage capacity.

  • High Thermal Conductivity: 9.71 W·m⁻¹·K⁻¹ enables excellent heat dissipation.

  • No Undesired Loss Mechanisms: Free from up-conversion, ESA, and concentration quenching.

Applications


  • High Power Diode Pumped Systems: Yb:CaF2 is ideal for high power diode pumped systems due to its low quantum defect and high optical-to-optical conversion efficiencies.

  • Laser Amplifiers: Utilized in laser amplifiers for its comparably long fluorescence lifetime and wide emission linewidth.

  • Diode-Pumped Femtosecond Lasers and Amplifiers: Suitable for femtosecond lasers and amplifiers, offering high performance in these applications.

  • Kerr-Lens Mode-Locked Oscillator: Employed in Kerr-lens mode-locked oscillators due to its wide emission linewidth and high thermal conductivity.

  • Yb:CaF2 Thin-Disk Laser: Used in thin-disk laser configurations for efficient laser operation.

  • Diode-Pumped Yb:CaF2 Amplifier: Ideal for diode-pumped Yb:CaF2 amplifiers, providing scalability and excellent optical quality.