Yb CALGO Laser Crystal
Yb:CaGdAlO4 (Yb:CALGO)- Yb doped crystals for high power and ultrashort(femtosecond) lasers
Yb-doped CaGdAlO4 crystal (Yb:CALGO) is now recognized to exhibit outstanding properties for the production of high-power and ultra-short laser pulses. It has the broad and smooth emission bandwidth to generate very short pulses (<100 fs). Additionally its’ high thermal conductivity make it is able to hold high power pumping(2 at. % Yb:CALGO thermal conductivity to be 6.9 and 6.3 WK−1 m−1 along the a and c axis); The generation of both very short pulse and high average power femtosecond oscillators has been demonstrated.
Yb3+:CaGdAlO4 has been recently demonstrated to be very interesting for the development of diode–pumped short-pulsed modelocked lasers. Compared with Ti: Sapphire crystal（the choice for the development of ultrashort laser system producing very short and powerful pulses using the Chirped Pulse Amplification technique，Since the beginning of the 90’s）,Yb:CALGO can be directly pumped by very efficient and high power semiconductor laser.( Titanium Sapphire crystal pumped by green laser).
- Type Of Crystal: TeO2
- Crystal Diameter: 5 mm
- Crystal Length: 15 mm
- AR Coating: One side
Solid state femtosecond oscillators
Ultrafast solid-state laser¬——time-resolved spectroscopy, multiphoton imaging, micromachining, refractive surgery, acceleration of particles, X-rays generation, fusion, etc.
Diode–pumped short-pulsed modelocked lasers
Femtosecond lasers technology
Bicolor double-pulse regime¬——Yb:CALGO, it is possible to generate double pulses with different wavelengths, which is to our best knowledge the first demonstration of bicolor femtosecond double-pulse operation. Very broad spectrum has been obtained with a bandwidth greater than 30 nm (fig. 4). The spectrum can be fit with two Gaussians: one centered at 1040 nm with a bandwidth of 21 nm and one centred at 1057 nm with a bandwidth of 10 nm with lower amplitude (60%).
High thermal conductivity
Large gain bandwidth
Broad and smooth emission bandwidth
Low refractiveindex-temperature gradient
Absorption band is covered by high-power InGaAs laser diodes
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