USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode

Specifications

Center Wavelength: 0.658 um
Output Power: 35 mW
Operating Temperature: -10 ~ +60 °C
Storage Temperature: -40 ~ +85 °C
Threshold Current: 30-70 mA
Operating Current: 70-120 mA
Operating Voltage: 2.1-3.0 V
Beam Divergence Parallel To The Junction: 7-10.5°
Beam Divergence Perpendicular To The Junction: 18-26°
Lasing Wavelength: 645-665 nm
Monitor Current: 0.05-1.5 mA
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Features

  • Visible Red Light Output: Typical 658 nm wavelength for clear, high-visibility applications.
  • High Optical Power: Up to 35 mW continuous wave output, 50 mW pulsed.
  • Single Transverse Mode: Delivers a stable, clean beam profile for precision applications.
  • Built-in Monitor Diode: Enables output stability through feedback control.
  • Compact Package: Easy integration into various optical instruments.
  • Wide Operating Range: Reliable performance from –10°C to +60°C

Applications

  • Laser Leveler: Provides precise, visible reference lines for alignment tasks.
  • Laser Scanner: Ideal for barcode and industrial scanning systems.
  • Optical Equipment Light Source: Suitable for measurement and analysis tools.
  • TE Mode Oscillation Systems: Ensures stable transverse electric mode operation.