Laser Diode FOLD-640-32S-VBG

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Specifications

Center Wavelength: 0.64 um
Output Power: 32 mW
Coherence Length: >0.5 m
Emitter Size: 1x2 µm
Storage Temperature: -40 to +80 °C
Central Stabilized Temperature: 15-45 °C
Operating Temperature: -10 to +50 °C
Beam Divergence, Parallel: 10
Beam Divergence, Perpendicular: 24°
Slope Efficiency: 1.0 mW/mA
Monitoring Output Current: 0.2 mA
Photodiode Reverse Voltage: 30 V
Reverse Voltage: 2 V
Forward Voltage: 2.6 V
Forward Current: 105 mA
Threshold Current: 60 mA
Line Width: 300 MHz
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Features


  • Single-mode semiconductor laser diode

  • Fixed wavelength of 640nm with narrow spectral width

  • 32mW CW output power

  • Integrated VBG for wavelength stabilization

  • High performance and reliability

  • Suitable for various opto-electronic applications

Applications


  • HeNe Replacement

  • Raman Spectroscopy

  • Metrology

  • Bio-Instrumentation

  • Graphic Arts

  • Sensing

  • Analytical Instrumentation