Laser Diode FOLD-640-32S-VBG

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Specifications

Center Wavelength: 0.64 um
Output Power: 32 mW
Coherence Length: >0.5 m
Emitter Size: 1x2 µm
Storage Temperature: -40 to +80 °C
Central Stabilized Temperature: 15-45 °C
Operating Temperature: -10 to +50 °C
Beam Divergence, Parallel: 10
Beam Divergence, Perpendicular: 24°
Slope Efficiency: 1.0 mW/mA
Monitoring Output Current: 0.2 mA
Photodiode Reverse Voltage: 30 V
Reverse Voltage: 2 V
Forward Voltage: 2.6 V
Forward Current: 105 mA
Threshold Current: 60 mA
Line Width: 300 MHz

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Features

  • Single-mode semiconductor laser diode
  • Fixed wavelength of 640nm with narrow spectral width
  • 32mW CW output power
  • Integrated VBG for wavelength stabilization
  • High performance and reliability
  • Suitable for various opto-electronic applications

Applications

  • HeNe Replacement
  • Raman Spectroscopy
  • Metrology
  • Bio-Instrumentation
  • Graphic Arts
  • Sensing
  • Analytical Instrumentation