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Page 8 - Detectors for Accurate Light Measurements

PDC Series Electronic Carrier Module
Optoelectronic Components
The PDC module is a single-photon detection carrier able to properly bias any silicon avalanche diode operated in so-called “Geiger-mode” which means operated above breakdown voltage (BV as high as 480V), so that a single incoming photon triggers an avalanche of electrons already large enough to be detected and counted as an ...

Specifications

Active Diameter: 46 mm
Peak Quantum Efficiency: -- %
Spectral Range: 380-1000nm
Data Sheet
PDM Series Photon Counting Detector Modules
Optoelectronic Components
The PDM series photon counting detector modules are all solid-state instruments. They have a photon detection efficiency of 49% at 550nm and generate a TTL output pulse per detected photon. With fast-timing option (additional circuit board installed) they provide better than 50ps FWHM photon timing resolution. The excellent ...

Specifications

Active Diameter: 0.1 mm
Peak Quantum Efficiency: 49 %
Spectral Range: 400-1000nm
Data Sheet
FastGated-SPAD
Optoelectronic Components
The FastGatedSPAD module is a compact detection module capable of gating a silicon SPAD for wide dynamic range optical measurement. The module includes a fast pulse generator, with gating transitions below 200 ps at repetition rates up to 80 MHz, with fully programmable ON time and excess bias. The differential front-end electronics ...

Specifications

Active Diameter: 0.05 mm
Peak Quantum Efficiency: 55 %
Spectral Range: 400-1000nm
Data Sheet
TFMD5000B Silicon PIN Photodiode
Three Five Materials
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications

Diode Type: Si
Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000R Silicon PIN Photodiode
Three Five Materials
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications

Diode Type: Si
Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000 Silicon PIN Photodiode
Three Five Materials
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications

Diode Type: Si
Wavelength Of Operation: 1050 nm
Data Sheet
Photomultiplier Accessories
Proxi Vision
ProxiVision offers a variety of components to suit your individual need for operating the Customized Photomultipliers or Modules.
Data Sheet
Photomultiplier 19mm Types
Proxi Vision
ProxiVision is pleased to introduce the Channel Photomultiplier Technology as a new product line focussing on LifeScience and Analytical applications - now available as Customized PhotoMultiplier (CPM) detectors and modules. The CPM is an ultra high sensitivity optical detector which replaces conventional photomultipliers (PMTs) and ...

Specifications

PMT Type: PMT (photomutiplier tube)
Wavelength Of Max Response: 900 nm
Wavelength Range: 115-900nm
Rise Time: -- ns
Data Sheet
Photomultiplier 9mm Types
Proxi Vision
ProxiVision is pleased to introduce the Channel Photomultiplier Technology as a new product line focussing on LifeScience and Analytical applications - now available as Customized PhotoMultiplier (CPM) detectors and modules. The CPM is an ultra high sensitivity optical detector which replaces conventional photomultipliers (PMTs) and ...

Specifications

PMT Type: PMT (photomutiplier tube)
Wavelength Of Max Response: 900 nm
Wavelength Range: 115-900nm
Rise Time: -- ns
Data Sheet
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
GPD Optoelectronics Corp
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
4, 8, 12, or 16 Element Monolithic Linear Array
GPD Optoelectronics Corp
Linear Arrays

Specifications

Diode Type: Other
Wavelength Of Operation: 1650 nm
Data Sheet
Large Area InGaAs Photodiodes
GPD Optoelectronics Corp
Large Area InGaAs Photodiodes

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
High Speed InGaAs Photodiodes
GPD Optoelectronics Corp
High Speed InGaAs Photodiodes

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
Ge Photodiodes
GPD Optoelectronics Corp
Ge Photodiodes

Specifications

Diode Type: Ge
Wavelength Of Operation: 1300 nm
Data Sheet
InGaAs Quadrant Photodiodes
GPD Optoelectronics Corp
InGaAs Quadrant Photodiodes

Specifications

Sensor Size: 3 mm
Max Power: N/A W
Min Detectable Power: N/A mW
Spatial Resolution: N/A um
Max Power Density: N/A kW/cm^2
...
Data Sheet
Extended InGaAs Photodiodes
GPD Optoelectronics Corp
Extended InGaAs Photodiodes

Specifications

Material: Extended Range InGaAs
Spectral Range: 1000-2600nm
Effective Aperture: N/A mm
Mounting: Mounted or Unmounted
Data Sheet
InGaAs Thermoelectric Cooled Photodiodes
GPD Optoelectronics Corp
InGaAs Thermoelectric Cooled Photodiodes

Specifications

Material: Indium Gallium Arsenide (InGaAs)
Spectral Range: 1000-2600nm
Effective Aperture: N/A mm
Mounting: Mounted or Unmounted
Data Sheet
InGaAs Avalanche Photodiodes
GPD Optoelectronics Corp
InGaAs Avalanche Photodiodes

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 1000-1630nm
Data Sheet
Ge Avalanche Photodiodes
GPD Optoelectronics Corp
Avalanche Photodiodes

Specifications

APD Type: Ge
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 800-1800nm
Data Sheet
High Performance Balanced Photodetector (BPD-1)
Insight Photonic Solutions Inc
The BPD-1 differential photodetector is a DC to 400 MHz dual balanced photodetector optimized for swept source OCT (SS-OCT) imaging systems.  By careful design, the BPD-1 supports high speed SS-OCT, minimizing factors that other detectors do not even specify, such as harmonic distortion and group delay.  Importantly, with ...

Specifications

Material: Indium Gallium Arsenide (InGaAs)
Spectral Range: 950-1650nm
Effective Aperture: N/A mm
Mounting: Mounted
Data Sheet
FP1-850K Photodetectors
Inject Enterprise
A photodiode of the type FP1-850K with a spectral sensitivity range of 810-870 nm with the introduction of radiation into the body through a multimode fiber with a core diameter 50 μm. It is made on the basis of a silicon pin photodiode   for use in fiber-optic communication systems, gyroscopes, measuring equipment and other ...

Specifications

Diode Type: Si
Wavelength Of Operation: 810 nm
Data Sheet
RQ-300 X-ray Source
Staib Instruments Inc
The STAIB Instruments RQ-300 X-ray source is a precision instrument designed specifically for X-ray Photoelectron Spectroscopy (XPS).The source is equipped with a twin anode: Aluminum (Al), producing X-rays in the 1486.6 eV line; and Magnesium (Mg), producing X-rays in the 1253.5 eV line. The system is water-cooled, and can be ...
Data Sheet
Large Area InGaAs PIN Photodiodes FD3000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD2000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD1500W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet