Introducing the cutting-edge 525nm GaN TOSA, a state-of-the-art semiconductor laser diode designed to deliver exceptional performance and reliability. This product is meticulously engineered to meet the highest standards, ensuring optimal functionality and durability. With its precise wavelength of 525nm, this laser diode is crafted to provide superior output, making it an ideal choice for various advanced applications.

The 525nm GaN TOSA is built with a focus on high reliability, incorporating a robust design that adheres to RoHS compliance and GR-468 standards. This ensures that the product not only meets environmental and safety regulations but also delivers consistent performance across its operational lifespan. The laser diode's fiber output power of 40mW is a testament to its powerful capabilities, making it a valuable component for professionals seeking precision and efficiency.

Designed with meticulous attention to detail, the 525nm GaN TOSA features a sophisticated mechanical design that enhances its functionality and ease of integration. The product's fiber characteristics, including a core diameter of 9 um and a clad diameter of 125 um, are optimized for superior performance. Additionally, the fiber's numerical aperture of 0.14 ensures excellent light transmission, while the 1-meter fiber length provides flexibility in various setups.

It is crucial to handle the 525nm GaN TOSA with care, as semiconductor chips are sensitive to electro-static damage. Proper precautions, such as using antistatic materials during transportation and ensuring operators are grounded, are essential to prevent electrical overstress damage. Maintaining a controlled environment with humidity levels above 40% RH and using grounding mats can further safeguard the product from potential damage.