Description
The thin-film lithium niobate ultra-high bandwidth intensity modulator is a high-performance electro-optical conversion device independently developed and owned by our company Independent intellectual property rights. This product is packaged through high-precision coupling process technology, achieving a maximum electro-optical bandwidth of 3dB 110GHz electro-optical modulation rate.
Compared with traditional lithium niobate crystal modulators, this product features a low half-wave voltage and high stability. The characteristics of small device size and thermo-optical bias control can be widely applied in digital optical communication, microwave photonics, and backbone communication networks And fields such as communication-related scientific research projects.
Rof TFLN modulator 20G/70G/110G Intensity Modulator thin film lithium niobate modulator
Specifications
| Extinction Ratio: | Not Specified |
|---|
Features
- The radio frequency bandwidth can reach up to 25/70/110 GHz at most
- Low half-wave voltage
- Insertion loss is as low as 5 dB
- Small device size
Applications
- Digital optical communication
- Microwave photonics
- Backbone communication networks
- Communication research projects
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