RTPQ-Switch Electro-Optical Crystal for High Repetition Rate Lasers

Specifications

Aperture Diameter: 2 mm
Peak Optical Power Density: 600 MW/cm^2
Wavelength Range: 420 – 2800 nm
Transmission: 98.5 %
Extinction Ratio: >= 100:1
Half-Wave Voltage (QR5510A Model): 2000 V
Application Wavelength Range: 420-2800 nm
Typical Laser Wavelengths: 755/1030/1064/1535/2100/2780 nm
Operating Temperature Range: -50℃ to +70℃
High Resistivity: >10^11 Ω•cm
High Damage Threshold: >10 J/cm² @ 1064 nm 10 ns 10 Hz
Low Insertion Loss: <1% @ 1064 nm
Crystal Structure: Orthorhombic system
Lattice Parameters: a=12.96Å; b=10.56Å; c=6.49Å
Mohs Hardness: 5
Density: 3.6 g/cm³
Melting Point: ~1000℃
Ferroelectric Transition Temperature: ~810℃
Thermal Expansion Coefficient: αx=1.01x10^-5, αy=1.37x10^-5, αz=-4.17x10^-6
Dielectric Constant Eeff: 13.0
Thermo-Optic Coefficient: -0.029 nm/℃
Electro-Optic Constants: Y-CUT: r51=38.5 pm/V, X-CUT: r33=35 pm/V, r23=12.5 pm/V, r13=10.6 pm/V
Nonlinear Coefficients: d15=2.0 pm/V, d24=3.6 pm/V, d31=2.0 pm/V, d32=3.6 pm/V, d33=8.3 pm/V
Resistivity: ~10^11-10^12 Ω·cm
Deliquescence: None
1064 Nm Half-Wave Voltage (2x2x20mm): 800 V
1064 Nm Half-Wave Voltage (4x4x20mm): 1600 V
1064 Nm Half-Wave Voltage (6x6x20mm): 2400 V
1064 Nm Half-Wave Voltage (8x8x20mm): 3200 V
Transmission Range: 350-4500 nm
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Features


  • Low Operating Voltage: For example, the half-wave voltage of the QR5510A model product is about 2000V.

  • Wide Application Wavelength Range: 420-2800 nm.

  • Typical Laser Wavelength Representatives: 755/1030/1064/1535/2100/2780 nm.

  • Wide Operating Temperature Range: -50℃ to +70℃.

  • High Resistivity: >1011 Ω•cm.

  • High Damage Threshold: >10 J/cm² @ 1064 nm, 10 ns, 10 Hz.

  • Low Insertion Loss: <1% @ 1064 nm.

  • Good Stability: Non-deliquescence.

  • No Piezoelectric Ringing Effect: Suitable for high repetition frequency applications (up to 100 KHz).

Applications


  • Laser Q-switching

  • Pulse selector

  • Phase modulation

  • Cavity dumping

  • Attenuator