ET-10 Emissometer

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Specifications

Wavelength Bands: 3.0-4.0 um, 3.0-5.0 um, 4.0-5.0 um, 8.0-12.0 um
Angle Of Incidence (from Normal): 20 deg
Accuracy: 0.03 (abs. refl. units)
Repeatability: 0.005 units
Beam Spot Size: 12.7 mm
Measurement Time: 10 sec
Measured Parameter:: Directional hemispherical reflectance (DHR)
Measured Value:: Absolute reflectance (0-1)
Calculated Value:: Directional thermal emissivity at 20º
Wavelength Bands:: 3.0-5.0, 8.0-12.0 (microns)
Angle Of Incidence:: 20º from normal incidence
Calibration Coupon:: Specular Gold
Accuracy:: +/- .03
Repeatability:: ±.005 units
Beam Spot Size:: 0.50 inches
Measurement Time:: 10 seconds
Sample Size & Geometry:: Flat: ≥ 0.5 in. diameter Curved: 6 in. convex; 12 in. concave
Warm Up Time:: 90 seconds
Time Between Measurements:: 2 seconds
Sample Temperature:: Ambient or heated/cooled to 0 - 100º C
Operating Temp:: 0º to 40º C
Run Time:: 2 hours on one battery

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Features

  • Six Discrete Bands: Provides in-band reflectance data for six discrete bands: 1.5–2.0, 2.0–3.5, 3.0–4.0, 4.0–5.0, 5.0–10.5, and 10.5–21 µm.
  • Fast Warm-up: No equilibration time needed between measurements, allowing for quick data collection.
  • Immediate Data: Touch screen display for data review and management.
  • Portable: Battery powered cordless design.
  • Room Temperature Samples: Calculate emissivity without heating sample.
  • Fast Calibration: One minute calibration at start of measurement session.

Applications

  • Defense & Aerospace: Essential for IR signature reduction and heat transfer studies.
  • Cool Building Analysis: Evaluate reflective materials for energy-efficient construction.
  • Radiative Heat Transfer: Emissivity for thermal modeling  and thermal camera calibration.
  • Semiconductor Industry: Analyze wafer emissivity and fabrication processes.