99.5% BeO Ceramic Substrate Manufacturer/High Thermal Low Dielectric Beryllium Ceramic Substrate For RF Microwave Package
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Ships from:
China
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Sold by:
Coraynic Technology Limited -
On FindLight:
since 2025
Description
- 99.5% BeO ceramic substrate, suitable for use as a ceramic rod in RF microwave high-power resistors.
- High thermal conductivity and low dielectric constant are the real reasons that BeO materials were widely used in electronic technologies
- BeO ceramic is currently used in high-performance, high-power microwave packages
- BeO substrates have also been used for high circuit density multi-chip components, Use
- BeO material to dissipate the heat generated in the system in time to ensure the system stability and reliability.
Metalized thick film lithographic substrates on BeO substrates are well suited for high-reliability, high-density microwave circuits. These substrates can be Working under conditions above 44 GHz for Telecommunications, live broadcasts, Satellite communication modules, mobile phones, personal communication services, base stations, advanced avionics, and Global Positioning System (GPS). Size can be and space scales as small as 0.001 inches, and routinely mounted in 4 x 4 Inches on the substrate. SiC reinforced aluminum metal matrix composites combined with DBC- BeO substrate has been successfully used for high current IGBT (insulated gate bipolar transistor). The design of the module substrate. Al/ SiC material combines high heat dissipation, low aluminum alloy density and low coefficient of thermal expansion, and BeO the substrate is matched so that the thermal stress at the joint is reduced.
99.5% BeO Ceramic Substrate Manufacturer/High Thermal Low Dielectric Beryllium Ceramic Substrate For RF Microwave Package
Specifications |
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|---|---|
| Material: | Ceramic |
| Type Of Ceramic: | Glazed, Unglazed |
| Component Type: | Reflectors, Rods, Tubes, Substrates |
| Density: | 2.8 G/cm3 |
| Thermal Conductivity: | ＞275 W/m•K (at RT) |
| Grain Size: | 11~18 mm |
| Coeffcient Of Thermal Expansion: | 7.98 (RT~500℃) |
| Dielectric Constant: | 6.61 MHz (at RT) |
| Flexural Strength (MOR):: | 196 MPa |
| Volume Resistivity: | 2.5x10^15 Ω-cm (at RT) |
Features
- Why choose Coraynic Technology
- Sufficient supply
- Completive price
- Excellent performance
- Good service
- Top-quality raw material
- Prompt delivery
Stock and transportation condition:
Before transporting, check whether the packaging container is complete and sealed. During transportation, ensure that the container does not leak, collapse, fall or damage. It is strictly forbidden to mix with acids, oxidants, foods and food additives. Transport vehicles should be equipped with leakage emergency handling equipment when transporting. During transportation, it should be protected from exposure, rain and high temperature. When transporting by road, follow the prescribed route and do not stay in residential areas and densely populated areas.
Applications
- Our high-quality ceramic packages support a wide variety of RF power transistors and MMICS, including transistors fabricated in Si, GaAs, and GaN.
- All packages are plated with electrolytic nickel and gold to meet the exacting standards of the microelectronics packaging industry.