Description

Opto Diode’s Near Infrared (NIR) emitters are engineered for high-output performance, spectral precision, and long-term reliability in mission-critical applications. Available in narrow bandwidths and a range of center wavelengths from 700 nm to 1300 nm, our NIR devices support applications from machine vision to medical diagnostics, and from industrial automation to defense and aerospace systems.

Each emitter is designed to deliver consistent radiometric output and excellent thermal stability, making them ideal for integration into systems that require high signal-to-noise ratios, precise optical control, and long operational life.

EQ Photonics GmbH - High-Power GaAlAs IR Emitters OD-850F

EQ Photonics

Specifications

Wavelength: 850 nm
Output Power (typical): 30 mW
Emission Angle: 8 degree
Forward Voltage, V_F @ I_F = 100 MA: 1.6 V
Reverse Breakdown Voltage, V_R @ I_R = 10 μA: 5 to 30 V
Rise Time I_FP = 50 MA: 20 nsec
Fall Time I_FP = 50 MA: 20 nsec

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Features

  • High Optical Output
  • 850 nm Peak Emission
  • Hermetically Sealed TO-46 Package
  • Narrow Angle for Long Distance Applications

Applications

  • Long Distance Application 
  • Detection with corresponding Sensors as well available

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