1N6264 Hermetic GaAs Infrared Emitting Diode
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United States
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On FindLight:
since 2020
Description
The 1N6264 is a high-performance infrared emitting diode designed for applications requiring precise optical alignment and high radiant intensity. Encased in a robust TO-46 package, this diode is engineered to deliver consistent performance in demanding environments. Its hermetic seal ensures reliability and longevity, making it an ideal choice for applications where environmental factors could affect performance.
This infrared emitting diode operates at a peak wavelength of 940nm, providing optimal performance in a variety of settings. Its narrow emission angle ensures focused light output, which is crucial for applications requiring precise targeting and minimal light dispersion. The 1N6264 is mechanically and wavelength matched to the TO-18 series phototransistor, ensuring seamless integration and compatibility in complex systems.
Manufactured by Light in Motion LLC, the 1N6264 is RoHS compliant, underscoring its commitment to environmental standards. This diode is designed to withstand a wide range of operating temperatures, ensuring reliable performance in both extreme cold and heat. With its high radiant intensity and robust construction, the 1N6264 is a versatile component suitable for a variety of infrared applications.
1N6264 Hermetic GaAs Infrared Emitting Diode
Specifications |
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|---|---|
| Wavelength: | 940 nm |
| Output Power (typical): | 6 mW |
| Emission Angle: | 16 degree |
Features
- Good Optically to Mechanical Alignment: Ensures precise performance and reliability.
- Compatibility: Mechanically and wavelength matched to the TO-18 series phototransistor.
- High Radiant Intensity: Typical radiant intensity of 44 mW/Sr for efficient infrared emission.
- RoHS Compliant: Environmentally friendly and adheres to industry standards.
- Peak Emission Wavelength: Operates at a wavelength of 940 nm, ideal for infrared applications.
- Narrow Angle TO-46 Package: Provides focused emission with an emission angle of +/- 8 degrees.
- Durable Construction: Hermetic GaAs construction for enhanced durability and performance.
- Wide Operating Temperature Range: Can operate between -65°C to +125°C, suitable for various environments.
- High Forward Current Capability: Continuous forward current of 100 mA and pulse forward current of 10 A.
- Low Forward Voltage: Forward voltage of 1.7 V at 100 mA for efficient power usage.
- Quick Response Time: Rise and fall times of 1 µs for fast switching applications.
Applications
- Remote Control Systems: The 1N6264 is ideal for use in remote control systems due to its high radiant intensity and narrow emission angle, ensuring precise signal transmission.
- Optical Sensors: With its good optical to mechanical alignment, this diode is suitable for integration into optical sensor systems for accurate detection and measurement.
- Data Communication: The 1N6264 can be used in infrared data communication applications, benefiting from its high-speed rise and fall times.
- Industrial Automation: Its robust hermetic package makes it suitable for use in harsh industrial environments where reliable performance is critical.
- Security Systems: The diode's high radiant intensity and narrow emission angle make it an excellent choice for security systems requiring precise and reliable infrared illumination.
- Medical Equipment: The 1N6264 can be used in medical devices that require infrared light sources, thanks to its stable performance and compliance with RoHS standards.