InGaAs Avalanche Photodiodes KPDEA007-56F
Description
InGaAs avalanche photodiode.
InGaAs Avalanche Photodiodes KPDEA007-56F
Specifications |
|
|---|---|
| APD Type: | InGaAs |
| Operational Wavelength (Typical): | 1310 nm |
| Operational Wavelength Range: | 1310-1550nm |
Features
High speed (Up to 1.25Gbps)
Low dark current
High sensitivity
Applications
SONET
GE-PON
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
External Vendor
Kyosemi Opto America Corp
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Frequently Asked Questions
The maximum speed of the InGaAs Avalanche Photodiodes KPDEA007-56F is up to 1.25Gbps.
The operating temperature range for the KPDEA005-56F is -40 to +85 degrees Celsius.
The responsivity of the KPDEA007-56F at a wavelength of 1310nm is between 0.80 and 0.90 A/W.
The dark current of the KPDEA005-56F is between 10 and 50 nA.
The breakdown voltage of the KPDEA007-56F is between 35 and 55 V.