InGaAs Avalanche Photodiodes KPDEA007-56F
Description
InGaAs avalanche photodiode.
InGaAs Avalanche Photodiodes KPDEA007-56F
Specifications |
|
---|---|
APD Type: | InGaAs |
Operational Wavelength (Typical): | 1310 nm |
Operational Wavelength Range: | 1310-1550nm |
Features
High speed (Up to 1.25Gbps)
Low dark current
High sensitivity
Applications
SONET
GE-PON
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
-
Ships from:
United States
-
Sold by:
-
On FindLight:
External Vendor
Claim Kyosemi Opto America Corp Page to edit and add data
Frequently Asked Questions
The maximum speed of the InGaAs Avalanche Photodiodes KPDEA007-56F is up to 1.25Gbps.
The operating temperature range for the KPDEA005-56F is -40 to +85 degrees Celsius.
The responsivity of the KPDEA007-56F at a wavelength of 1310nm is between 0.80 and 0.90 A/W.
The dark current of the KPDEA005-56F is between 10 and 50 nA.
The breakdown voltage of the KPDEA007-56F is between 35 and 55 V.
You May Also Like
Don’t have an account?
Please consider registering
NOTE: It may take up to 10 min to receive the registration verification link. For immediate assistance please use the “GUEST” option above.
Your inquiry has been received
by adding a password
Benefits of having an account:
- Save time on filling future request forms
- Track your prior Requests
- Save favorite products in your account
- Choose your contact preferences
- If you change your mind later, you may close you account with 1 click
The Leading Photonics Marketplace
Within 3-10 minutes you will receive an email with a validation link to activate your account.
If you don't receive the confirmation link soon, please let us know at contact@findlight.net
Useful quick links