InGaAs Avalanche Photodiode KPDEA005-56F
Description
InGaAs avalanche photodiode.
InGaAs Avalanche Photodiode KPDEA005-56F
Specifications |
|
|---|---|
| APD Type: | InGaAs |
| Operational Wavelength (Typical): | 1310 nm |
| Operational Wavelength Range: | 1310-1550nm |
Features
High speed (Up to 1.25Gbps)
Low dark current
High sensitivity
Applications
SONET
GE-PON
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
External Vendor
Kyosemi Opto America Corp
Are you Kyosemi Opto America Corp representative? Claim This Page Today!
No one from Kyosemi Opto America Corp has updated the information yet
Claim Kyosemi Opto America Corp Page to edit and add data
Claim Kyosemi Opto America Corp Page to edit and add data
Frequently Asked Questions
The maximum speed of the KPDEA005-56F is up to 1.25Gbps.
The operating temperature range for the KPDEA005-56F is -40 to +85 degrees Celsius.
The dark current of the KPDEA005-56F is between 10 and 50 nA.
The breakdown voltage of the KPDEA005-56F is between 35 and 55 V.
The responsivity of the KPDEA005-56F is 0.85 to 0.95 A/W at 1310nm and 0.95 to 1.05 A/W at 1550nm.