InGaAs Avalanche Photodiode 2.5 Gbps
Description
Go!Foton’s Avalanche Photodiode (APD), front-illuminate type is suitable for 2.5 Gbps applications in G-PON/Ge-PON. This InGaAs APD has a planer structure for high reliability.
InGaAs Avalanche Photodiode 2.5 Gbps
Specifications |
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|---|---|
| APD Type: | InGaAs |
| Operational Wavelength (Typical): | 1550 nm |
| Operational Wavelength Range: | 1000-1625nm |
Features
Ceramic sub-carrier
Planer Structure for High Reliability
1000 to 1625nm Spectral Response
Low Dark Current
Applications
G-PON / Ge-PON
Long Haul Receivers
SONET/SDH Receivers
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How to order?
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Ships from:
United States
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Frequently Asked Questions
The InGaAs Avalanche Photodiode (APD) is suitable for 2.5 Gbps applications in G-PON/Ge-PON.
The InGaAs APD has a spectral response range of 1000 to 1625nm.
The InGaAs APD features a ceramic sub-carrier and a planer structure for high reliability.
The InGaAs APD can be used in G-PON/Ge-PON, long haul receivers, and SONET/SDH receivers.
The dimensions of the Chip-on-Carrier version are not provided in the given description.