Avalanche Photo-Detector MTAPD-06-005
Description
Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low as 300 ps; frequency response to 1 GHz; and a low breakdown voltage of 80V-200V.
Units are also RoHS compliant. Standard Si APDs are offered with multiple customization options, including operational voltage selection, wavelength specific band-pass filtering, and hybridization. Package options include hermetically sealed TO metal cans and cost-effective SMD (LCC) types, with additional customization by request.
The MTAPD-06-xxx is a circular (Ф500um) .2 mm2 active area Avalanche Photodiode with optimized sensitivity at 800 nm & housed in a hermetic TO-46 metal can package. It is well suited for applications requiring High Speed & Low Noise in visible-near IR applications.
Avalanche Photo-Detector MTAPD-06-005
Specifications |
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|---|---|
| APD Type: | Si |
| Operational Wavelength (Typical): | 800 nm |
| Operational Wavelength Range: | 400-1100nm |
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Frequently Asked Questions
The MTAPD-06-005 is well-suited for applications requiring high speed and low noise in visible-near IR applications, such as optical rangefinders, high speed optical communications, medical equipment, and barcode readers.
The standard Si APDs are offered with multiple customization options, including operational voltage selection, wavelength specific band-pass filtering, and hybridization.
The active area size of the MTAPD-06-005 is 0.2 mm2 with a diameter of 500 μm.
The breakdown voltage range of the MTAPD-06-005 is 80V-200V.
The Marktech Si APD can detect wavelengths between 400 nm and 1100 nm.