Avalanche Photo-Detector MTAPD-06-001
Description
Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low as 300 ps; frequency response to 1 GHz; and a low breakdown voltage of 80V-200V.
Units are also RoHS compliant. Standard Si APDs are offered with multiple customization options, including operational voltage selection, wavelength specific band-pass filtering, and hybridization. Package options include hermetically sealed TO metal cans and cost-effective SMD (LCC) types, with additional customization by request.
The MTAPD-06-xxx is a circular (Ф230um) 0.04 mm2 active area Avalanche Photodiode with optimized sensitivity at 800 nm & housed in a hermetic TO-46 metal can package. It is well suited for applications requiring High Speed & Low Noise in visible-near IR applications.
Avalanche Photo-Detector MTAPD-06-001
Specifications |
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|---|---|
| APD Type: | Si |
| Operational Wavelength (Typical): | 800 nm |
| Operational Wavelength Range: | 400-1100nm |
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Frequently Asked Questions
The MTAPD-06-001 is available in a hermetically sealed TO metal can package or a cost-effective SMD (LCC) type, with additional customization by request.
The MTAPD-06-001 has a circular active area of 0.04 mm2 with a diameter of 230 μm.
The breakdown voltage of the MTAPD-06-001 is between 120V-160V or 160V-200V, with other voltages available.
The optimal gain of the MTAPD-06-001 is 100.
The MTAPD-06-001 has optimized sensitivity at 800 nm.