SB1-532-0.3-100: 532nm Microchip Laser
Description
The SB1-532-0.3-100 532nm Microchip Laser of our Microchip Series is a short nanosecond pulsed, 0.3uJ, low SWaP, ultra-compact, 100 kHz, passively Q-switched, DPSS laser. Bright Microlaser has pushed its unique microchip laser technology further with the new, completely re-designed all-in-one SB1 model.
Thanks to its advanced optical, mechanical and electronic design, this 532nm microchip laser merges the optical cavity and the driving and monitoring electronics into a single-unit, highly-integrated and rugged laser package, while keeping the same outstanding laser output performance.
The SB1 model is available in 28 standard configurations at different output wavelengths, spanning from 236.5nm to 1064nm, delivering pulse energy as high as 80µJ, with pulse durations from a few ns down to 350ps, factory-set repetition rate from single shot to 100kHz, and is capable of producing single-frequency operation with narrow linewidths, and an M^2 of <1.3 with a pulse to pulse instability of <3%.
All these models are interchangeable, sharing the same form factor and electrical and software interfaces across wavelengths, making them a flexible and versatile solution for system integrators who want to explore new applications.
SB1-532-0.3-100: 532nm Microchip Laser
Specifications |
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|---|---|
| Avg. Power: | 0.03 W |
| Wavelength: | 532 nm |
| Repetition Rate: | 0.001-100kHz |
| Spatial Mode (M^2): | 1.3 |
| Pulse Duration: | 0.4 ns |
| Pulse-to-Pulse Stability (RMS): | - % |
| Cooling: | Air |
| Storage Temperature Range: | -20°C to +60°C |
| Operational Temperature Range: | +10°C to +40°C |
| Mechanical Package: | SB1 |
| Electric Power Concumption: | 20 W |
| Warm-Up Time: | 5 min |
| Beam Ellipticity: | 0.8 |
| Beam Divergence: | 9 mrad |
| Beam Diameter (at Exit W/o Beam Expander): | 0.6 mm |
| Beam Quality (M^2): | 1.3 |
| Energy Stability (Long Term): | 5% |
| Energy Stability (Short Term): | 3% |
| Peak Power: | 0.75 kW |
| Pulse Energy: | 0.3 uJ |
Features
SB1-532-0.3-100: 532nm Microchip Laser comes with the following key features:
- 532 nm popular wavelength
- < 400ps sub-ns pulse duration
- 0.3uJ energy per pulse
- Single Longitudinal Mode with M^2 of 1.3
- All-In-One Miniature Design
Applications
Thanks to its solid performance parameters this 532nm microchip laser has found applications in
- Biophotonics
- LIBS
- LiDAR
- Telemetry
- Laser manufacturing
- Micromachining
- Spectroscopy
- Raman spectroscopy
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2014
Frequently Asked Questions
The SB1-532-0.3-100 532nm Microchip Laser is a short nanosecond pulsed, 0.3uJ, low SWaP, ultra-compact, 100 kHz, passively Q-switched, DPSS laser.
The key features of the SB1-532-0.3-100 532nm Microchip Laser are 532 nm popular wavelength, < 400ps sub-ns pulse duration, 0.3uJ energy per pulse, Single Longitudinal Mode with M^2 of 1.3, and an all-in-one miniature design.
The SB1-532-0.3-100 532nm Microchip Laser has found applications in Biophotonics, LIBS, LiDAR, Telemetry, Laser manufacturing, Micromachining, Spectroscopy, and Raman spectroscopy.
The technical specifications of the SB1-532-0.3-100 532nm Microchip Laser include output wavelength of 532 nm, pulse repetition rate of 100 kHz, pulse energy > 0.3 uJ, pulse width < 400 ps, peak power > 0.75 kW, and beam quality (M2) < 1.3.
The options available for the SB1-532-0.3-100 532nm Microchip Laser include beam expander and collimator, heat-sink, development kit, and quick start/evaluation kit.