SB1-473-3-5: 473nm Microchip Laser

Specifications

Avg. Power: 0.015 W
Wavelength: 473 nm
Repetition Rate: 1 – 5 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 2.5 ns
Pulse-to-Pulse Stability (RMS): 5 %
Cooling: Air
Output Wavelength: 473 nm
Pulse Repetition Rate: 5 kHz
Pulse Energy: > 3 uJ
Pulse Width: < 2 ns
Peak Power: > 1 kW
Short Term Output Energy Instability: < 3 %
Long Term Output Power Instability: < 5 %
Beam Quality (M^2): < 1.5
Output Beam Dimensions (H X V) At Exit Aperture (1/e^2) Without Beam Expander: < 0.25 x 0.2 mm
Beam Divergence (H X V, Half Angle) Without Beam Expander: < 0.7 x 4 mrad
Beam Ellipticity (axes Ratio): > 0.80
Warm Up Time After Cold Start: < 5 min
Power Consumption: < 20 W
Operational Temperature Range: +10°C to +40°C
Storage Temperature Range: -20°C to +60°C
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Features


  • 473 nm

  • <2ns

  • >3uJ

  • Single Longitudinal Mode

  • All-In-One Miniature Design

Applications


  • Biophotonics

  • LIBS

  • LiDAR

  • Telemetry

  • Laser manufacturing

  • Micromachining

  • Spectroscopy

  • Raman