Gallium Antimonide Epitaxy Ready Polished Wafers
Description
Gallium Antimonide is supplied in polished wafer form. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. Higher index substrates of the type (n,1,1) where n = 1,2,3,4,5,6 etc and orientations such as (110) are also available. We also offer wafers with cut and/or cleaved flats.
Gallium Antimonide Epitaxy Ready Polished Wafers
Specifications |
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|---|---|
| Wafer Material: | Gallium Antimonide (GaSb) |
| Diameter: | 50.5-100 mm |
| Thickness: | 500-1000 um |
For pricing, technical or any other questions please contact the supplier
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Frequently Asked Questions
Polished wafers are packaged in a coin-style wafer shipper, individually sealed in two outer bags in an inert atmosphere. Cassette shipments are available on request.
Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Higher index substrates of the type (n,1,1) where n = 1,2,3,4,5,6 etc and orientations such as (110) are also available.
The electrical and dopant specifications of the wafer include dopant type, carrier concentration cm-3, mobility cm2 V-1 s-1, and E.P. D. cm-2.
Gallium Antimonide is a material supplied in polished wafer form.
The thickness of the wafer is 500 ± 25 µm for 2", 625 ± 25 µm for 3", and 1000± 25 µm for 4".