Indium Phosphide Epitaxy Ready Polished Wafers
Description
Indium Phosphide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. Higher index substrates of the type (n,1,1) where n = 1,2,3,4,5,6 etc and orientations such as (110) are also available. We also offer wafers with cleaved flats.
Indium Phosphide Epitaxy Ready Polished Wafers
Specifications |
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|---|---|
| Wafer Material: | Indium Phosphide (InP) |
| Diameter: | 50.5 mm |
| Thickness: | 350-500 um |
For pricing, technical or any other questions please contact the supplier
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Frequently Asked Questions
All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability.
The electrical and dopant specifications for Indium Phosphide include dopant type, carrier concentration cm-3, mobility cm2 V-1 s-1, and E.P.D. cm-2.
Indium Phosphide can be supplied in as-cut, etched or polished wafer forms.
Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system.
Polished wafers are offered in a coin-style wafer shipper, individually sealed in two outer bags in inert atmosphere. Cassette shipments are available on request.